快速和低电压A2RAM ' 1 '状态编程的证据

2018 International Conference on Simulation of Semiconductor Processes and Devices (SISPAD) Pub Date : 2018-09-01 DOI:10.1109/SISPAD.2018.8551653

F. T. Wakam, J. Lacord, M. Bawedin, S. Martinie, S. Cristoloveanu, J. Barbe

{"title":"快速和低电压A2RAM ' 1 '状态编程的证据","authors":"F. T. Wakam, J. Lacord, M. Bawedin, S. Martinie, S. Cristoloveanu, J. Barbe","doi":"10.1109/SISPAD.2018.8551653","DOIUrl":null,"url":null,"abstract":"For the first time, we demonstrate a new concept for programming the ‘1’ state in A2RAM based on the impact ionization in the bridge, which can be assisted by the band-to-band tunneling effect in the top part of the silicon film. This new programming method reduces the programming voltage and writing time, making the A2RAM suitable as 1T-DRAM. Evidenced through TCAD simulation, the feasibility in matrix environment is also demonstrated.","PeriodicalId":170070,"journal":{"name":"2018 International Conference on Simulation of Semiconductor Processes and Devices (SISPAD)","volume":"36 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2018-09-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"2","resultStr":"{\"title\":\"Evidence of fast and low-voltage A2RAM ‘1’ state programming\",\"authors\":\"F. T. Wakam, J. Lacord, M. Bawedin, S. Martinie, S. Cristoloveanu, J. Barbe\",\"doi\":\"10.1109/SISPAD.2018.8551653\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"For the first time, we demonstrate a new concept for programming the ‘1’ state in A2RAM based on the impact ionization in the bridge, which can be assisted by the band-to-band tunneling effect in the top part of the silicon film. This new programming method reduces the programming voltage and writing time, making the A2RAM suitable as 1T-DRAM. Evidenced through TCAD simulation, the feasibility in matrix environment is also demonstrated.\",\"PeriodicalId\":170070,\"journal\":{\"name\":\"2018 International Conference on Simulation of Semiconductor Processes and Devices (SISPAD)\",\"volume\":\"36 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2018-09-01\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"2\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"2018 International Conference on Simulation of Semiconductor Processes and Devices (SISPAD)\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/SISPAD.2018.8551653\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"2018 International Conference on Simulation of Semiconductor Processes and Devices (SISPAD)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/SISPAD.2018.8551653","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}

引用次数: 2

摘要

我们首次展示了一种基于电桥中的冲击电离在A2RAM中编程“1”态的新概念，这可以通过硅膜顶部的带对带隧道效应来辅助。这种新的编程方法降低了编程电压和写入时间，使A2RAM适用于1T-DRAM。通过TCAD仿真验证了该方法在矩阵环境下的可行性。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

查看原文本刊更多论文

Evidence of fast and low-voltage A2RAM ‘1’ state programming

For the first time, we demonstrate a new concept for programming the ‘1’ state in A2RAM based on the impact ionization in the bridge, which can be assisted by the band-to-band tunneling effect in the top part of the silicon film. This new programming method reduces the programming voltage and writing time, making the A2RAM suitable as 1T-DRAM. Evidenced through TCAD simulation, the feasibility in matrix environment is also demonstrated.

求助全文

通过发布文献求助，成功后即可免费获取论文全文。去求助

来源期刊

2018 International Conference on Simulation of Semiconductor Processes and Devices (SISPAD)

自引率

0.00%

发文量