用于超低功耗逻辑应用的多层二维垂直隧道场效应管的设计指南和限制

2018 International Conference on Simulation of Semiconductor Processes and Devices (SISPAD) Pub Date : 2018-09-01 DOI:10.1109/SISPAD.2018.8551731

Shang-Chun Lu, Yuanchen Chu, Youngseok Kim, M. Mohamed, Gerhard Klimeck, T. Palacios, Umberto Ravaioli

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引用次数: 0

摘要

本文以黑磷为例，提出了一种垂直二维材料基tfet的新设计方法，采用不对称层数的顶层和底层，不掺杂源/漏极。结果表明，当通道长度减小到5 nm以下时，可以持续出现突然导通和离子/断比> 105的现象。结果与其他基于有前途的二维材料同质/异质结构的tfet进行了基准测试，同时提出了局限性和指导方针。

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Design Guidelines and Limitations of Multilayer Two-dimensional Vertical Tunneling FETs for UltraLow Power Logic Applications

New designs for vertical 2D-materials-based TFETs are proposed in this paper adopting asymmetric layer numbers for the top and bottom layer with undoped source/drain using Black Phosphorus as an example. The results show that abrupt turn-on and Ion/Ioff > 105 can be sustained when the channel length is down to sub-5 nm. The results are benchmarked against other TFETs based on promising 2D materials homo-/hetero-structures, meanwhile, the limitations, as well as guidelines, are presented.

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2018 International Conference on Simulation of Semiconductor Processes and Devices (SISPAD)

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