{"title":"用于宽带应用的高性能可见范围光电探测器","authors":"J. Gaitonde, Sunit Digamber Fulari, R. Lohani","doi":"10.1109/i-PACT44901.2019.8960139","DOIUrl":null,"url":null,"abstract":"We present a theoretical model of front illuminated GaN Optical Field Effect Transistor (OPFET) with floating gate accounting for photovoltaic and photoconductive effects. Our simulation results reveal desirable photodetector characteristics in the visible-region at the modulation frequencies in the microwave to terahertz range. The device exhibits superior performance than many of the photodetectors working at microwave or terahertz frequencies. The device has a great potential for wide bandwidth applications.","PeriodicalId":214890,"journal":{"name":"2019 Innovations in Power and Advanced Computing Technologies (i-PACT)","volume":"128 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2019-03-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":"{\"title\":\"High Performance Visible-Range Photodetector for Wide-Bandwidth Applications\",\"authors\":\"J. Gaitonde, Sunit Digamber Fulari, R. Lohani\",\"doi\":\"10.1109/i-PACT44901.2019.8960139\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"We present a theoretical model of front illuminated GaN Optical Field Effect Transistor (OPFET) with floating gate accounting for photovoltaic and photoconductive effects. Our simulation results reveal desirable photodetector characteristics in the visible-region at the modulation frequencies in the microwave to terahertz range. The device exhibits superior performance than many of the photodetectors working at microwave or terahertz frequencies. The device has a great potential for wide bandwidth applications.\",\"PeriodicalId\":214890,\"journal\":{\"name\":\"2019 Innovations in Power and Advanced Computing Technologies (i-PACT)\",\"volume\":\"128 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2019-03-01\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"0\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"2019 Innovations in Power and Advanced Computing Technologies (i-PACT)\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/i-PACT44901.2019.8960139\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"2019 Innovations in Power and Advanced Computing Technologies (i-PACT)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/i-PACT44901.2019.8960139","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
High Performance Visible-Range Photodetector for Wide-Bandwidth Applications
We present a theoretical model of front illuminated GaN Optical Field Effect Transistor (OPFET) with floating gate accounting for photovoltaic and photoconductive effects. Our simulation results reveal desirable photodetector characteristics in the visible-region at the modulation frequencies in the microwave to terahertz range. The device exhibits superior performance than many of the photodetectors working at microwave or terahertz frequencies. The device has a great potential for wide bandwidth applications.
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