研制一种毫米大小的自由漂浮无线植入式光电刺激装置

Y. Jia, Maysam Ghovanloo
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引用次数: 5

摘要

下一代脑机接口(BMI)将能够通过由多个微小植入物组成的分布式架构与大大脑区域上的大规模神经元集成进行接口。本文介绍了一个毫米大小的自由浮动无线供电可植入16-ch光电刺激(FF-WIOS2)装置的片上系统(SoC)原型。FF-WIOS2通过60 MHz的3线圈感应链路无线供电和控制。前向遥测链路通过开关键(OOK)向FF-WIOS2发送增产参数,以配置增产模式。后遥测链路通过负载移位键控(LSK)以闭环方式报告FF-WIOS2整流电压,以稳定植入物接收功率。该SoC采用0.35 μ m标准CMOS工艺制造,采用基于开关电容的刺激(SCS),以37%的充电效率对片外电容充电至5v,以提供大的瞬时电流。在刺激开始时,电容器提供电荷,对LED阵列进行光刺激时的峰值电流为1.7-12 mA,对微电极阵列(MEA)进行双相电刺激时的峰值电流为100-700 μA。后一种机制也是主动电荷平衡,以确保增产安全。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
Towards a mm-Sized Free-Floating Wireless Implantable Opto-Electro Stimulation Device
Next generation of brain-machine interfaces (BMI) will be able to interface with large-scale neuronal ensembles over large brain areas with a distributed architecture consisting of multiple tiny implants. This paper presents a system-on-a-chip (SoC) prototype towards a mm-sized free-floating wirelessly-powered implantable 16-ch opto-electro stimulation (FF-WIOS2) device. FF-WIOS2 is wirelessly powered and controlled through a 3-coil inductive link at 60 MHz. Forward telemetry link delivers stimulation parameters to the FF-WIOS2 via on-off keying (OOK) to configure stimulation patterns. Back telemetry link reports the FF-WIOS2 rectified voltage in a closed-loop fashion via load-shift-keying (LSK) to stabilize the implant received power. The SoC, fabricated in a 0.35-µm standard CMOS process, employs switched-capacitor-based stimulation (SCS) by charging an off-chip capacitor up to 5 V at 37% charging efficiency to provide large instantaneous current. At the onset of stimulation, the capacitor delivers charge, with peak current values of either 1.7-12 mA to a LED array for optical stimulation or 100-700 μA to a microelectrode array (MEA) for biphasic electrical stimulation. The latter mechanism is also actively charge-balanced to ensure stimulation safety.
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