基于FinFET技术的ESD二极管器件仿真与分析

2020 International EOS/ESD Symposium on Design and System (IEDS) Pub Date : 2021-06-23 DOI:10.23919/IEDS48938.2021.9468834

Yunhao Li, Yize Wang, Yuan Wang

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引用次数: 1

摘要

随着CMOS向FinFET技术的缩小，ESD器件的性能严重退化。本文研究了两种类型的ESD保护二极管，门控二极管和STI二极管，用于14nm FinFET技术。相应的三维TCAD仿真有助于理解上述两个二极管的工作机理。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

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ESD Diode Devices Simulation and Analysis in a FinFET Technology

As CMOS scales down to FinFET technology, the performance of ESD devices degenerates seriously. In this work, two types of ESD protection diodes, Gated Diode and STI Diode, are investigatedin 14nm FinFET technology. The corresponding 3D TCAD simulation helps to understand the working mechanism for the above two diodes.

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2020 International EOS/ESD Symposium on Design and System (IEDS)

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