GeSn中红外辐射载体寿命

G. Daligou, S. Assali, A. Attiaoui, É. Bouthillier, O. Moutanabbir
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引用次数: 0

摘要

建立了基于八波段kp形式和包络函数近似(EFA)形式的理论框架来研究GeSn合金的发光性能。利用该框架,估算了Ge0.83 Sn0.17样品在4-80 K温度范围内的稳态辐射载流子寿命,其数量级为ns。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
Radiative Carrier Lifetime in GeSn Mid-Infrared Emitters
A theoretical framework based on the eight-band k.p formalism and the envelope function approximation (EFA) formalism is developed to investigate the luminescence properties of GeSn alloys. Using this framework, the steady-state radiative carrier lifetimes of Ge0.83 Sn0.17 samples are estimated in the ns order over the 4–80 K temperature range.
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