在0.13µm SiGe BiCMOS中实现38db转换增益和8dbm Psat的220 GHz滑动中频正交发射机

Zekun Li, Jixin Chen, Jiayang Yu, Huanbo Li, Zichun Zheng, Rui Zhou, Peigen Zhou, Zhe Chen, W. Hong
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引用次数: 2

摘要

由于无线通信对高数据速率传输的需求日益增长,太赫兹和亚太赫兹频段因其丰富的频谱资源而备受关注。高f_{T}/f_{\max}$的硅基技术为亚太赫兹通信系统提供了一种低成本的集成发射器和接收器的解决方案[1]-[4]。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
A 220 GHz Sliding-IF Quadrature Transmitter With 38-dB Conversion Gain and 8-dBm Psat in 0.13-µm SiGe BiCMOS
Due to the increasing demand for high-data-rate transmission in wireless communication, the terahertz (THz) and sub-terahertz (sub-THz) frequency bands have attracted great attention for their rich spectrum resources. Silicon-based technologies with high $f_{T}/f_{\max}$ provide a low-cost solution to integrate the transmitters and receivers for sub-THz communication systems [1]–[4].
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