一种紧凑的全w波段单片低噪声毫米波成像放大器

2018 IEEE International Conference on Integrated Circuits, Technologies and Applications (ICTA) Pub Date : 2018-11-01 DOI:10.1109/CICTA.2018.8705714

Shengzhou Zhang, Qiliang Li, Weifeng Zhu, Wanshun Jiang, F. Nian, Jianqin Deng

{"title":"一种紧凑的全w波段单片低噪声毫米波成像放大器","authors":"Shengzhou Zhang, Qiliang Li, Weifeng Zhu, Wanshun Jiang, F. Nian, Jianqin Deng","doi":"10.1109/CICTA.2018.8705714","DOIUrl":null,"url":null,"abstract":"This paper presents a compact full W-band microwave monolithic integrated circuit (MMIC) low noise amplifier (LNA) using commercially 100nm GaAs pHEMTs technology. With a chip area of 1.1 mm$^{2}$, the circuit consists of 4 stages $4\\times30\\mu$m gate width transistors. The main performances of the full W-band LNA can be summarized as following: the peak gain of 22dB with 3dB bandwidth of 28GHz from 75GHz to 103GHz, where gain is higher than 17dB within the full W-band. The circuit exhibits the noise figure less than 4.5dB on the entire 75GHz-110GHz range and the minimum of 3.5dB at 82GHz. The input and output return losses are better than 6dB and 9dB on the full W-band, respectively. In conclusion, the LNA predicts outstanding figure-of-merits.","PeriodicalId":186840,"journal":{"name":"2018 IEEE International Conference on Integrated Circuits, Technologies and Applications (ICTA)","volume":"14 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2018-11-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":"{\"title\":\"A compact full W-band monolithic low noise amplifier for millimeter-wave imaging\",\"authors\":\"Shengzhou Zhang, Qiliang Li, Weifeng Zhu, Wanshun Jiang, F. Nian, Jianqin Deng\",\"doi\":\"10.1109/CICTA.2018.8705714\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"This paper presents a compact full W-band microwave monolithic integrated circuit (MMIC) low noise amplifier (LNA) using commercially 100nm GaAs pHEMTs technology. With a chip area of 1.1 mm$^{2}$, the circuit consists of 4 stages $4\\\\times30\\\\mu$m gate width transistors. The main performances of the full W-band LNA can be summarized as following: the peak gain of 22dB with 3dB bandwidth of 28GHz from 75GHz to 103GHz, where gain is higher than 17dB within the full W-band. The circuit exhibits the noise figure less than 4.5dB on the entire 75GHz-110GHz range and the minimum of 3.5dB at 82GHz. The input and output return losses are better than 6dB and 9dB on the full W-band, respectively. In conclusion, the LNA predicts outstanding figure-of-merits.\",\"PeriodicalId\":186840,\"journal\":{\"name\":\"2018 IEEE International Conference on Integrated Circuits, Technologies and Applications (ICTA)\",\"volume\":\"14 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2018-11-01\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"0\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"2018 IEEE International Conference on Integrated Circuits, Technologies and Applications (ICTA)\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/CICTA.2018.8705714\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"2018 IEEE International Conference on Integrated Circuits, Technologies and Applications (ICTA)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/CICTA.2018.8705714","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}

引用次数: 0

摘要

本文提出了一种紧凑的全w波段微波单片集成电路(MMIC)低噪声放大器(LNA)，采用商用100nm GaAs pHEMTs技术。芯片面积为1.1 mm$^{2}$，电路由4级$4\times $ 30\mu$m栅极宽度晶体管组成。全w频段LNA的主要性能可以概括为:在75GHz到103GHz范围内，3dB带宽为28GHz，峰值增益为22dB，其中全w频段增益高于17dB。该电路在整个75GHz-110GHz范围内的噪声系数小于4.5dB，在82GHz范围内的噪声系数最小为3.5dB。在全w波段，输入和输出回波损耗分别优于6dB和9dB。总而言之，LNA预测了杰出的价值数字。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

查看原文本刊更多论文

A compact full W-band monolithic low noise amplifier for millimeter-wave imaging

This paper presents a compact full W-band microwave monolithic integrated circuit (MMIC) low noise amplifier (LNA) using commercially 100nm GaAs pHEMTs technology. With a chip area of 1.1 mm$^{2}$, the circuit consists of 4 stages $4\times30\mu$m gate width transistors. The main performances of the full W-band LNA can be summarized as following: the peak gain of 22dB with 3dB bandwidth of 28GHz from 75GHz to 103GHz, where gain is higher than 17dB within the full W-band. The circuit exhibits the noise figure less than 4.5dB on the entire 75GHz-110GHz range and the minimum of 3.5dB at 82GHz. The input and output return losses are better than 6dB and 9dB on the full W-band, respectively. In conclusion, the LNA predicts outstanding figure-of-merits.

求助全文

通过发布文献求助，成功后即可免费获取论文全文。去求助

来源期刊

2018 IEEE International Conference on Integrated Circuits, Technologies and Applications (ICTA)

自引率

0.00%

发文量