片上电感和变压器设计中损耗硅衬底的精确建模

2004 IEE Radio Frequency Integrated Circuits (RFIC) Systems. Digest of Papers Pub Date : 2004-06-06 DOI:10.1109/RFIC.2004.1320699

X. Huo, K.J. Chen, H. Luong, P. Chan

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引用次数: 4

摘要

考虑硅衬底的电损耗和涡流损耗，建立了损耗硅衬底的物理集总元模型。采用简化的阶梯结构精确地模拟了高导电性硅衬底的趋肤效应。对于不同电阻率硅衬底上的电感，与全波解算器的结果一致。

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Accurate modeling of lossy silicon substrate for on-chip inductors and transformers design

A physical based lumped element model is developed for lossy silicon substrates, considering both electric loss and eddy current loss induced by the substrate. A simplified ladder structure is used to accurately model the skin effect of the high conductivity silicon substrate. Good agreement with a full wave solver is obtained for inductors on different resistivity silicon substrates.

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来源期刊

2004 IEE Radio Frequency Integrated Circuits (RFIC) Systems. Digest of Papers

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