采用90nm节点技术的气隙铜互连可靠性及选择性W密封方法

Proceedings of the IEEE 2004 International Interconnect Technology Conference (IEEE Cat. No.04TH8729) Pub Date : 2004-06-07 DOI:10.1109/IITC.2004.1345693

J. Noguchi, K. Sato, N. Konishi, S. Uno, T. Oshima, U. Tanaka, K. Ishikawa, H. Ashihara, T. Saito, M. Kubo, H. Aoki, T. Fujiwara

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引用次数: 3

摘要

成功制备了4级Cu/气隙互连，并对采用ArF/90nm节点技术制备的气隙互连的可靠性进行了研究。气隙互连的应用对泄漏电流和TDDB特性有显著的改善。此外，通过选择性W密封工艺改进了气隙互连。这导致电容和有效介电常数的急剧减少。

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Reliability of air-gap Cu interconnect and approach to selective W sealing using 90nm node technology

4 levels of Cu/air-gap interconnects were successfully fabricated and the reliability of the air-gap interconnects using ArF/90nm node technology was investigated. There are distinguished improvements of leakage current and TDDB characteristics by the application of air-gap interconnects. In addition, an air-gap interconnect is improved with a selective W sealing process . This results in drastic reduction of capacitance and effective dielectric constant.

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Proceedings of the IEEE 2004 International Interconnect Technology Conference (IEEE Cat. No.04TH8729)

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