ArF/ 90nm节点SoC制造中Cu/SiOC互连的集成和可靠性问题

IEEE International Electron Devices Meeting 2003 Pub Date : 2003-12-08 DOI:10.1109/IEDM.2003.1269337

J. Noguchi, T. Oshima, U. Tanaka, K. Sasajima, H. Aoki, K. Sato, K. Ishikawa, T. Saito, N. Konishi, S. Hotta, S. Uno, K. Kikushima

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引用次数: 12

摘要

研究了用于ArF/ 90nm节点SoC制造的Cu/SiOC互连技术。本文描述了集成和可靠性问题。在集成技术方面，CMP分层、SiOC损伤和海沟底部短缺陷得到了显著改善。在可靠性方面，研究了应力迁移(SM)、电迁移(EM)和时间相关介质击穿(TDDB)。结果表明，高温应力增加了Cu的扩散和通孔电阻，ArF过程导致了TDDB的降解。验证了所建议的综合工艺是成熟的，对于运行条件是足够可靠的。

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Integration and reliability issues of Cu/SiOC interconnect for ArF/90 nm node SoC manufacturing

Cu/SiOC interconnect technology for ArF/90 nm node SoC manufacturing was investigated. This paper describes the integration and reliability issues. With regard to integration technologies, CMP delamination, SiOC damage and short defects on the trench bottom were improved dramatically. As to reliabilities, SM (stress migration), EM (electromigration) and TDDB (time dependent dielectric breakdown) were studied. Cu diffusion with via resistance increase by high temperature stress, and TDDB degradation due to the ArF process were found. It was confirmed that the suggested integrated process was mature and sufficiently reliable for the operation condition.

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IEEE International Electron Devices Meeting 2003

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