全sic准z源逆变器实验效率及热参数评价

2019 IEEE 60th International Scientific Conference on Power and Electrical Engineering of Riga Technical University (RTUCON) Pub Date : 2019-10-01 DOI:10.1109/RTUCON48111.2019.8982288

S. Stepenko, O. Husev, D. Vinnikov, S. P. Pimentel, Anatoliy Prystupa

{"title":"全sic准z源逆变器实验效率及热参数评价","authors":"S. Stepenko, O. Husev, D. Vinnikov, S. P. Pimentel, Anatoliy Prystupa","doi":"10.1109/RTUCON48111.2019.8982288","DOIUrl":null,"url":null,"abstract":"The paper presents results of the experimental investigation of full-SiC quasi-z-source (QZS) inverter. The study is devoted to a single-phase dc-ac solution which comprises SiC diode and SiC MOSFETs and demonstrates 97.1% efficiency. The experimental results that confirm efficient performance of the converter were presented and discussed. Due to its high efficiency and safe operation under high semiconductor devices temperatures the developed solution is feasible for PV applications. CEC efficiency characteristic was measured. The temperature behavior of semiconductors and heatsinks was investigated and detailed results were presented. The study aimed 1.8 kW as nominal power, however inverter was verified for secure operation and demonstrated acceptable efficiency for up to +33% from nominal power.","PeriodicalId":317349,"journal":{"name":"2019 IEEE 60th International Scientific Conference on Power and Electrical Engineering of Riga Technical University (RTUCON)","volume":"1 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2019-10-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"2","resultStr":"{\"title\":\"Experimental Efficiency and Thermal Parameters Evaluation in Full-SiC Quasi-Z-Source Inverter\",\"authors\":\"S. Stepenko, O. Husev, D. Vinnikov, S. P. Pimentel, Anatoliy Prystupa\",\"doi\":\"10.1109/RTUCON48111.2019.8982288\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"The paper presents results of the experimental investigation of full-SiC quasi-z-source (QZS) inverter. The study is devoted to a single-phase dc-ac solution which comprises SiC diode and SiC MOSFETs and demonstrates 97.1% efficiency. The experimental results that confirm efficient performance of the converter were presented and discussed. Due to its high efficiency and safe operation under high semiconductor devices temperatures the developed solution is feasible for PV applications. CEC efficiency characteristic was measured. The temperature behavior of semiconductors and heatsinks was investigated and detailed results were presented. The study aimed 1.8 kW as nominal power, however inverter was verified for secure operation and demonstrated acceptable efficiency for up to +33% from nominal power.\",\"PeriodicalId\":317349,\"journal\":{\"name\":\"2019 IEEE 60th International Scientific Conference on Power and Electrical Engineering of Riga Technical University (RTUCON)\",\"volume\":\"1 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2019-10-01\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"2\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"2019 IEEE 60th International Scientific Conference on Power and Electrical Engineering of Riga Technical University (RTUCON)\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/RTUCON48111.2019.8982288\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"2019 IEEE 60th International Scientific Conference on Power and Electrical Engineering of Riga Technical University (RTUCON)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/RTUCON48111.2019.8982288","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}

引用次数: 2

摘要

本文介绍了全sic准z源(QZS)逆变器的实验研究结果。该研究致力于由SiC二极管和SiC mosfet组成的单相直流-交流解决方案，效率为97.1%。给出并讨论了实验结果，验证了该变换器的高效性能。由于其在半导体器件高温下的高效率和安全运行，该解决方案在光伏应用中是可行的。测量了CEC效率特性。研究了半导体和散热器的温度行为，并给出了详细的结果。该研究的标称功率为1.8 kW，但逆变器的安全运行得到了验证，并证明了在标称功率下高达33%的可接受效率。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

查看原文本刊更多论文

Experimental Efficiency and Thermal Parameters Evaluation in Full-SiC Quasi-Z-Source Inverter

The paper presents results of the experimental investigation of full-SiC quasi-z-source (QZS) inverter. The study is devoted to a single-phase dc-ac solution which comprises SiC diode and SiC MOSFETs and demonstrates 97.1% efficiency. The experimental results that confirm efficient performance of the converter were presented and discussed. Due to its high efficiency and safe operation under high semiconductor devices temperatures the developed solution is feasible for PV applications. CEC efficiency characteristic was measured. The temperature behavior of semiconductors and heatsinks was investigated and detailed results were presented. The study aimed 1.8 kW as nominal power, however inverter was verified for secure operation and demonstrated acceptable efficiency for up to +33% from nominal power.

求助全文

通过发布文献求助，成功后即可免费获取论文全文。去求助

来源期刊

2019 IEEE 60th International Scientific Conference on Power and Electrical Engineering of Riga Technical University (RTUCON)

自引率

0.00%

发文量