采用非对称MOS变容管和65nm CMOS功率分裂-变压器混合电路的270- 300ghz双平衡参数上变换器

Zhiyu Chen, W. Choi, K. O. Kenneth
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引用次数: 3

摘要

300千兆赫的无线通信因其利用广泛的可用带宽支持高数据速率的潜力而备受关注。在[1]-[5]中已经报道了工作在$\sim 300$ GHz的发射机。为了支持高阶调制、高数据率和增加的范围,发射机必须具有高输出1dB压缩点(OP $_{1dB})和宽带宽。不幸的是,本文只报道了CMOS发射机$[3- 5]_{}$的饱和输出功率水平${P}_{sat}$,而不是OP1dB。在b[6]中已经报道了一个272GHz的CMOS放大器,但它只实现了-10.18dBm的OP1dB和小于5GHz的3dB带宽。在CMOS中300GHz的宽带功率放大是不实用的,因为晶体管fmax是350美元或更少。因此,cmostranster线性输出功率受到上变频混频器OP1dB的限制。不幸的是,在300GHz附近工作的混频器受到低转换增益(CG)和OP1dB的影响。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
270-to-300GHz Double-Balanced Parametric Upconverter Using Asymmetric MOS Varactors and a Power-Splitting- Transformer Hybrid in 65nm CMOS
Wireless communication at $\sim 300$ GHz is drawing attention due to its potential to support a high data-rate using the wide available bandwidth. Transmitters operating at $\sim 300$ GHz have been reported in [1] –[5]. In order to support the high-order modulation, high datarate, and an increased range, the transmitter must have a high output 1dB compression point (OP $_{1dB})$ and a wide bandwidth. Unfortunately, instead of OP1dB, only the saturated output power levels, ${P}_{sat}$, of the CMOS transmitters $[3- 5] _{}$ are reported. A 272GHz CMOS amplifier has been reported in [6], but it only achieves an OP1dB of -10.18dBm and a 3dB bandwidth of less than 5GHz. Broadband power amplification at 300GHz in CMOS is not practical since the transistor fmax is $\sim 350$ GHz or less. Due to this, the CMOStransmitter linear output power is limited by the upconversion mixer OP1dB. Unfortunately, the mixers operating near 300GHz suffer from low conversion gain (CG) and OP1dB.
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