{"title":"PEDOT:PSS-MAPbBr3量子点复合空穴传输层CsPbBr3钙钛矿发光二极管的研究","authors":"Chi-Ta Li, Sea-Fue Wang, You Wei, Haixing Chang, Qiming Zhao, Lung-Chien Chen","doi":"10.1109/ICASI57738.2023.10179553","DOIUrl":null,"url":null,"abstract":"This work presents the effect of a complex hole transport layer (HTL) of poly (3,4-thylenedioxythiophene): poly(styrenesulfonate) (PEDOT: PSS) and MAPbBr<inf>3</inf> quantum dots (QDs) in cesium lead bromide perovskite light-emitting diodes (CsPbBr<inf>3</inf> PeLEDs) structure. The MAPbBr<inf>3</inf> QDs used MAPbBr<inf>3</inf> bulk crystals formed by the liquid-phase crystal growth method at constant temperature as the source material. The CsPbBr<inf>3</inf> PeLEDs with PEDOT:PSS-MAPbBr<inf>3</inf> QDs complexe HTL exhibited the better performance, to compare the CsPbBr<inf>3</inf> PeLEDs with PEDOT:PSS-MAPbBr<inf>3</inf> QDs complexe HTL, owing to the MAPbBr<inf>3</inf> QDs in PEDOT:PSS layer apparently boosted injection efficiency such that the injected holes recombine with electrons in the CsPbBr<inf>3</inf> active layer, rapidly, and then and emissions. The best results of luminescence and external quantum efficiency of CsPbBr<inf>3</inf> PeLEDs with PEDOT:PSS-MAPbBr<inf>3</inf> QDs complex hole transport layer were 10810 cd/m<sup>2</sup> and 0.34% at an applied voltage of 5.5 V, respectively.","PeriodicalId":281254,"journal":{"name":"2023 9th International Conference on Applied System Innovation (ICASI)","volume":"15 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2023-04-21","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":"{\"title\":\"Study of CsPbBr3 Perovskite Light-Emitting Diodes with PEDOT:PSS-MAPbBr3 QDs Complex Hole Transport Layer\",\"authors\":\"Chi-Ta Li, Sea-Fue Wang, You Wei, Haixing Chang, Qiming Zhao, Lung-Chien Chen\",\"doi\":\"10.1109/ICASI57738.2023.10179553\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"This work presents the effect of a complex hole transport layer (HTL) of poly (3,4-thylenedioxythiophene): poly(styrenesulfonate) (PEDOT: PSS) and MAPbBr<inf>3</inf> quantum dots (QDs) in cesium lead bromide perovskite light-emitting diodes (CsPbBr<inf>3</inf> PeLEDs) structure. The MAPbBr<inf>3</inf> QDs used MAPbBr<inf>3</inf> bulk crystals formed by the liquid-phase crystal growth method at constant temperature as the source material. The CsPbBr<inf>3</inf> PeLEDs with PEDOT:PSS-MAPbBr<inf>3</inf> QDs complexe HTL exhibited the better performance, to compare the CsPbBr<inf>3</inf> PeLEDs with PEDOT:PSS-MAPbBr<inf>3</inf> QDs complexe HTL, owing to the MAPbBr<inf>3</inf> QDs in PEDOT:PSS layer apparently boosted injection efficiency such that the injected holes recombine with electrons in the CsPbBr<inf>3</inf> active layer, rapidly, and then and emissions. The best results of luminescence and external quantum efficiency of CsPbBr<inf>3</inf> PeLEDs with PEDOT:PSS-MAPbBr<inf>3</inf> QDs complex hole transport layer were 10810 cd/m<sup>2</sup> and 0.34% at an applied voltage of 5.5 V, respectively.\",\"PeriodicalId\":281254,\"journal\":{\"name\":\"2023 9th International Conference on Applied System Innovation (ICASI)\",\"volume\":\"15 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2023-04-21\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"0\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"2023 9th International Conference on Applied System Innovation (ICASI)\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/ICASI57738.2023.10179553\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"2023 9th International Conference on Applied System Innovation (ICASI)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/ICASI57738.2023.10179553","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
Study of CsPbBr3 Perovskite Light-Emitting Diodes with PEDOT:PSS-MAPbBr3 QDs Complex Hole Transport Layer
This work presents the effect of a complex hole transport layer (HTL) of poly (3,4-thylenedioxythiophene): poly(styrenesulfonate) (PEDOT: PSS) and MAPbBr3 quantum dots (QDs) in cesium lead bromide perovskite light-emitting diodes (CsPbBr3 PeLEDs) structure. The MAPbBr3 QDs used MAPbBr3 bulk crystals formed by the liquid-phase crystal growth method at constant temperature as the source material. The CsPbBr3 PeLEDs with PEDOT:PSS-MAPbBr3 QDs complexe HTL exhibited the better performance, to compare the CsPbBr3 PeLEDs with PEDOT:PSS-MAPbBr3 QDs complexe HTL, owing to the MAPbBr3 QDs in PEDOT:PSS layer apparently boosted injection efficiency such that the injected holes recombine with electrons in the CsPbBr3 active layer, rapidly, and then and emissions. The best results of luminescence and external quantum efficiency of CsPbBr3 PeLEDs with PEDOT:PSS-MAPbBr3 QDs complex hole transport layer were 10810 cd/m2 and 0.34% at an applied voltage of 5.5 V, respectively.
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