基于0.18μm三维硅绝缘体CMOS的超宽带发射机设计

2007 41st Annual Conference on Information Sciences and Systems Pub Date : 2007-03-14 DOI:10.1109/CISS.2007.4298407

Z. Zhang, A. Andreou

{"title":"基于0.18μm三维硅绝缘体CMOS的超宽带发射机设计","authors":"Z. Zhang, A. Andreou","doi":"10.1109/CISS.2007.4298407","DOIUrl":null,"url":null,"abstract":"The three-dimensional (3D) integration of silicon on insulator (SOI) wafers has provided us with a tremendous opportunity for ultra-high density, high performance and low-power integrated circuits. We present in this paper an ultra wideband transmitter fabricated in a fully depleted 3D SOI technology. It operates below 960 MHz with small ominidirectional antennas, such as a dipole.","PeriodicalId":151241,"journal":{"name":"2007 41st Annual Conference on Information Sciences and Systems","volume":"53 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2007-03-14","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":"{\"title\":\"Design of An Ultra Wideband Transmitter in 0.18μm 3D Silicon on Insulator CMOS\",\"authors\":\"Z. Zhang, A. Andreou\",\"doi\":\"10.1109/CISS.2007.4298407\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"The three-dimensional (3D) integration of silicon on insulator (SOI) wafers has provided us with a tremendous opportunity for ultra-high density, high performance and low-power integrated circuits. We present in this paper an ultra wideband transmitter fabricated in a fully depleted 3D SOI technology. It operates below 960 MHz with small ominidirectional antennas, such as a dipole.\",\"PeriodicalId\":151241,\"journal\":{\"name\":\"2007 41st Annual Conference on Information Sciences and Systems\",\"volume\":\"53 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2007-03-14\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"0\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"2007 41st Annual Conference on Information Sciences and Systems\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/CISS.2007.4298407\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"2007 41st Annual Conference on Information Sciences and Systems","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/CISS.2007.4298407","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}

引用次数: 0

摘要

绝缘体上硅(SOI)晶圆的三维(3D)集成为我们提供了超高密度、高性能和低功耗集成电路的巨大机会。本文提出了一种采用全耗尽3D SOI技术制造的超宽带发射机。它工作在960兆赫以下，使用小的双向天线，如偶极子。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

查看原文本刊更多论文

Design of An Ultra Wideband Transmitter in 0.18μm 3D Silicon on Insulator CMOS

The three-dimensional (3D) integration of silicon on insulator (SOI) wafers has provided us with a tremendous opportunity for ultra-high density, high performance and low-power integrated circuits. We present in this paper an ultra wideband transmitter fabricated in a fully depleted 3D SOI technology. It operates below 960 MHz with small ominidirectional antennas, such as a dipole.

求助全文

通过发布文献求助，成功后即可免费获取论文全文。去求助

来源期刊

2007 41st Annual Conference on Information Sciences and Systems

自引率

0.00%

发文量