垂直碳化硅沟槽场效应管的反导特性

2012 24th International Symposium on Power Semiconductor Devices and ICs Pub Date : 2012-06-03 DOI:10.1109/ISPSD.2012.6229102

D. Sheridan, K. Chatty, V. Bondarenko, J. Casady

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引用次数: 19

摘要

对1200V SiC垂直沟槽场效应管的反导特性进行了评价。在没有传统体二极管的情况下，在需要反向换向的应用中，无论是否使用反并联二极管，碳化硅沟槽场效应管都能有效地在反向模式下工作。给出了传统半桥拓扑和级联码拓扑的器件特性和实验结果。

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Reverse conduction properties of vertical SiC trench JFETs

1200V SiC vertical trench JFETs have been evaluated for their reverse conduction properties. Absent of a traditional body diode, the SiC trench JFET is shown to be able to operate effectively in reverse mode when used with or without an antiparallel diode in applications requiring reverse commutation. Device characteristics and experimental results are given for both traditional half-bridge and cascode topologies.

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2012 24th International Symposium on Power Semiconductor Devices and ICs

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