通道掺杂浓度对BESOI MOSFET光传感器的影响

J. A. Padovese, L. Yojo, R. Rangel, K. Sasaki, J. Martino
{"title":"通道掺杂浓度对BESOI MOSFET光传感器的影响","authors":"J. A. Padovese, L. Yojo, R. Rangel, K. Sasaki, J. Martino","doi":"10.1109/SBMicro.2019.8919338","DOIUrl":null,"url":null,"abstract":"The BESOI (Back Enhanced SOI) MOSFET is a new device that was developed and fabricated at the University of Sao Paulo in 2015. Its main advantages are the reconfigurable behavior, i.e., can work both like P- and N-type transistor depending only of the back gate bias, and fabrication simplicity. This paper studies the influence of channel doping concentration on the sensitivity of BESOI MOSFET used as a light sensor. The light sensitivity is investigated for different doping elements (boron and phosphorus) and it is shown that one impurity is more suited for a certain operation mode, i.e., pMOS and nMOS. An optimal doping concentration for better light sensitivity is obtained, resulting in $10^{\\mathbf{17}} \\mathbf{cm} ^{\\mathbf{-3}}$ of boron for p-type $(V_{\\mathbf{GB}} \\lt \\lt 0)$ and the same level of phosphorus for n-type $(V_{\\mathbf{GB}} \\gt \\gt 0)$ BESOI MOSFET.","PeriodicalId":403446,"journal":{"name":"2019 34th Symposium on Microelectronics Technology and Devices (SBMicro)","volume":"5 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2019-08-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"2","resultStr":"{\"title\":\"Channel Doping Concentration Influence on BESOI MOSFET Light Sensor\",\"authors\":\"J. A. Padovese, L. Yojo, R. Rangel, K. Sasaki, J. Martino\",\"doi\":\"10.1109/SBMicro.2019.8919338\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"The BESOI (Back Enhanced SOI) MOSFET is a new device that was developed and fabricated at the University of Sao Paulo in 2015. Its main advantages are the reconfigurable behavior, i.e., can work both like P- and N-type transistor depending only of the back gate bias, and fabrication simplicity. This paper studies the influence of channel doping concentration on the sensitivity of BESOI MOSFET used as a light sensor. The light sensitivity is investigated for different doping elements (boron and phosphorus) and it is shown that one impurity is more suited for a certain operation mode, i.e., pMOS and nMOS. An optimal doping concentration for better light sensitivity is obtained, resulting in $10^{\\\\mathbf{17}} \\\\mathbf{cm} ^{\\\\mathbf{-3}}$ of boron for p-type $(V_{\\\\mathbf{GB}} \\\\lt \\\\lt 0)$ and the same level of phosphorus for n-type $(V_{\\\\mathbf{GB}} \\\\gt \\\\gt 0)$ BESOI MOSFET.\",\"PeriodicalId\":403446,\"journal\":{\"name\":\"2019 34th Symposium on Microelectronics Technology and Devices (SBMicro)\",\"volume\":\"5 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2019-08-01\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"2\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"2019 34th Symposium on Microelectronics Technology and Devices (SBMicro)\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/SBMicro.2019.8919338\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"2019 34th Symposium on Microelectronics Technology and Devices (SBMicro)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/SBMicro.2019.8919338","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 2

摘要

BESOI (Back Enhanced SOI) MOSFET是2015年在圣保罗大学开发和制造的一种新器件。它的主要优点是可重构的行为,即,可以像P型和n型晶体管一样工作,只依赖于后门偏置,并且制造简单。本文研究了通道掺杂浓度对BESOI MOSFET光传感器灵敏度的影响。研究了不同掺杂元素(硼和磷)的光敏性,表明一种杂质更适合某种工作模式,即pMOS和nMOS。结果表明,p型(V_{\mathbf{GB}} \lt \lt 0)$中硼含量为$10^{\mathbf{17}} \mathbf{cm} ^{\mathbf{-3}}$, n型(V_{\mathbf{GB}} \gt \gt 0)$ BESOI MOSFET中磷含量为$10^{\mathbf{17}} \mathbf{3}}$。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
Channel Doping Concentration Influence on BESOI MOSFET Light Sensor
The BESOI (Back Enhanced SOI) MOSFET is a new device that was developed and fabricated at the University of Sao Paulo in 2015. Its main advantages are the reconfigurable behavior, i.e., can work both like P- and N-type transistor depending only of the back gate bias, and fabrication simplicity. This paper studies the influence of channel doping concentration on the sensitivity of BESOI MOSFET used as a light sensor. The light sensitivity is investigated for different doping elements (boron and phosphorus) and it is shown that one impurity is more suited for a certain operation mode, i.e., pMOS and nMOS. An optimal doping concentration for better light sensitivity is obtained, resulting in $10^{\mathbf{17}} \mathbf{cm} ^{\mathbf{-3}}$ of boron for p-type $(V_{\mathbf{GB}} \lt \lt 0)$ and the same level of phosphorus for n-type $(V_{\mathbf{GB}} \gt \gt 0)$ BESOI MOSFET.
求助全文
通过发布文献求助,成功后即可免费获取论文全文。 去求助
来源期刊
自引率
0.00%
发文量
0
×
引用
GB/T 7714-2015
复制
MLA
复制
APA
复制
导出至
BibTeX EndNote RefMan NoteFirst NoteExpress
×
提示
您的信息不完整,为了账户安全,请先补充。
现在去补充
×
提示
您因"违规操作"
具体请查看互助需知
我知道了
×
提示
确定
请完成安全验证×
copy
已复制链接
快去分享给好友吧!
我知道了
右上角分享
点击右上角分享
0
联系我们:info@booksci.cn Book学术提供免费学术资源搜索服务,方便国内外学者检索中英文文献。致力于提供最便捷和优质的服务体验。 Copyright © 2023 布克学术 All rights reserved.
京ICP备2023020795号-1
ghs 京公网安备 11010802042870号
Book学术文献互助
Book学术文献互助群
群 号:481959085
Book学术官方微信