半导体-金属微光栅结构中红外区域的热辐射强度

B. Lin, Yuto Imae, Hnin Lai Lai Aye, K. Hayashi, Haruki Orito, B. Ma, S. Kuboya, Hideto Miyake, Y. Ishitani
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引用次数: 0

摘要

观察了介电材料表面金属/介电材料条纹结构的热发射。这些发射归因于在几微米的表面结构中由相干热晶格振动引起的电偶极子发射。未掺杂GaAs和GaP结构的发射能量接近纵向光学声子能量,而ZnO和GaN结构的发射能量峰值位于纵向光学声子和横向光学声子能量之间。GaN和ZnO的发射强度比GaAs强。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
Thermal radiation intensities in mid-infrared region from semiconductor-metal micro-grating structure
Thermal emissions from metal/dielectric-material stripe structures on the surface of dielectric materials are observed. These emissions are attributed to electric-dipole emissions induced by coherent thermal lattice vibrations in the surface structures of a few micrometers. The structures on undoped GaAs and GaP show the emission close to the longitudinal optical (LO) phonon energy, while the peak energy of emission from the structures on ZnO and GaN is located in between the LO and transverse optical (TO) mode energies. The emission intensities from GaN and ZnO are stronger than that of GaAs.
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