{"title":"采用Turbodisc/sup TM/ PE-MOCVD技术制备Ba/sub x/Sr/sub 1-x/TiO/sub 3/薄膜","authors":"Tingkai Li, P. Zawadzki, R. Stall","doi":"10.1109/IEMT.1996.559730","DOIUrl":null,"url":null,"abstract":"TurboDisc/sup (TM)/ and Plasma Enhanced MOCVD techniques have been used to deposit Ba/sub x/Sr/sub 1-x/TiO/sub 3/ (BST) thin films. The precursors for making the BST thin films were derived from Ba(thd)2, Sr(thd)2 and titanium isopropoxide (TIP). The BST thin films were deposited onto Pt/Ti/Si0/sub 2//Si wafers, Si (100) wafers and single-crystal sapphire substrates to measure their phase formation, thickness uniformity and electrical properties. Typically, 200 nm thick Ba/sub 0.5/Sr/sub 0.5/TiO/sub 3/ thin films on Pt electrodes have a dielectric constant of approximately 600, and a leakage current of less than 2/spl times/10/sup -7/ A/cm/sup 2/ at 100 kV/cm and room temperature. These characteristics suggest that the TurboDisc/sup (TM)/, PE-MOCVD technique could be used in the creation of reliable, high density memory devices. In addition, the relationship between composition, microstructure and electrical properties of BST thin films was also investigated.","PeriodicalId":177653,"journal":{"name":"Nineteenth IEEE/CPMT International Electronics Manufacturing Technology Symposium","volume":"95 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"1996-10-14","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":"{\"title\":\"Ba/sub x/Sr/sub 1-x/TiO/sub 3/ thin films made by Turbodisc/sup TM/ PE-MOCVD techniques\",\"authors\":\"Tingkai Li, P. Zawadzki, R. Stall\",\"doi\":\"10.1109/IEMT.1996.559730\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"TurboDisc/sup (TM)/ and Plasma Enhanced MOCVD techniques have been used to deposit Ba/sub x/Sr/sub 1-x/TiO/sub 3/ (BST) thin films. The precursors for making the BST thin films were derived from Ba(thd)2, Sr(thd)2 and titanium isopropoxide (TIP). The BST thin films were deposited onto Pt/Ti/Si0/sub 2//Si wafers, Si (100) wafers and single-crystal sapphire substrates to measure their phase formation, thickness uniformity and electrical properties. Typically, 200 nm thick Ba/sub 0.5/Sr/sub 0.5/TiO/sub 3/ thin films on Pt electrodes have a dielectric constant of approximately 600, and a leakage current of less than 2/spl times/10/sup -7/ A/cm/sup 2/ at 100 kV/cm and room temperature. These characteristics suggest that the TurboDisc/sup (TM)/, PE-MOCVD technique could be used in the creation of reliable, high density memory devices. In addition, the relationship between composition, microstructure and electrical properties of BST thin films was also investigated.\",\"PeriodicalId\":177653,\"journal\":{\"name\":\"Nineteenth IEEE/CPMT International Electronics Manufacturing Technology Symposium\",\"volume\":\"95 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"1996-10-14\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"0\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"Nineteenth IEEE/CPMT International Electronics Manufacturing Technology Symposium\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/IEMT.1996.559730\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"Nineteenth IEEE/CPMT International Electronics Manufacturing Technology Symposium","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/IEMT.1996.559730","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
Ba/sub x/Sr/sub 1-x/TiO/sub 3/ thin films made by Turbodisc/sup TM/ PE-MOCVD techniques
TurboDisc/sup (TM)/ and Plasma Enhanced MOCVD techniques have been used to deposit Ba/sub x/Sr/sub 1-x/TiO/sub 3/ (BST) thin films. The precursors for making the BST thin films were derived from Ba(thd)2, Sr(thd)2 and titanium isopropoxide (TIP). The BST thin films were deposited onto Pt/Ti/Si0/sub 2//Si wafers, Si (100) wafers and single-crystal sapphire substrates to measure their phase formation, thickness uniformity and electrical properties. Typically, 200 nm thick Ba/sub 0.5/Sr/sub 0.5/TiO/sub 3/ thin films on Pt electrodes have a dielectric constant of approximately 600, and a leakage current of less than 2/spl times/10/sup -7/ A/cm/sup 2/ at 100 kV/cm and room temperature. These characteristics suggest that the TurboDisc/sup (TM)/, PE-MOCVD technique could be used in the creation of reliable, high density memory devices. In addition, the relationship between composition, microstructure and electrical properties of BST thin films was also investigated.
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