I. Aiba, Y. Sasaki, K. Okashita, H. Tamura, Y. Fukagawa, K. Tsutsui, H. Ito, K. Kakushima, B. Mizuno, H. Iwai
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Feasibility study of plasma doping on Si substrates with photo-resist patterns
Plasma doping is one of the candidates of the impurity doping processes to form shallow junction. Although the PD is a highly efficient doping process, it would be useful to establish a proper wet cleaning method that follows the PD processes so that the PD can be used in the conventional semiconductor fabrication flow. The effects of the photo-resist masks are examined in conjunction with the PD processes including the retained dose after the removal of the photo-resist using the ashing.
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