{"title":"用于卫星通信的S波段跟踪接收机LNA","authors":"M. Arsalan, Falin Wu","doi":"10.1109/IWAT.2018.8379198","DOIUrl":null,"url":null,"abstract":"A novel implementation of a Pseudomorphic High Electron Mobility Transistor (pHEMT) Low Noise Amplifier (LNA) for use in satellite communications tracking receiver is presented in this paper. The proposed design is of a single stage LNA working between frequency range of 2000 MHz to 2200 MHz. The designed LNA exhibit a Noise Figure (NF) of 0.320 dB which is less than the available pHEMT S Band LNA designs along with a transducer gain greater than 10dB. The Voltage Standing Wave Ratio (VSWR) of the designed and simulated LNA is 1:1.324. Simulation and measurements are taken in Advanced System Design (ADS) software. The circuit is designed and simulated using FR4 PCB laminate.","PeriodicalId":212550,"journal":{"name":"2018 International Workshop on Antenna Technology (iWAT)","volume":"10 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2018-03-05","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"5","resultStr":"{\"title\":\"An S band tracking receiver LNA for satellite communications\",\"authors\":\"M. Arsalan, Falin Wu\",\"doi\":\"10.1109/IWAT.2018.8379198\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"A novel implementation of a Pseudomorphic High Electron Mobility Transistor (pHEMT) Low Noise Amplifier (LNA) for use in satellite communications tracking receiver is presented in this paper. The proposed design is of a single stage LNA working between frequency range of 2000 MHz to 2200 MHz. The designed LNA exhibit a Noise Figure (NF) of 0.320 dB which is less than the available pHEMT S Band LNA designs along with a transducer gain greater than 10dB. The Voltage Standing Wave Ratio (VSWR) of the designed and simulated LNA is 1:1.324. Simulation and measurements are taken in Advanced System Design (ADS) software. The circuit is designed and simulated using FR4 PCB laminate.\",\"PeriodicalId\":212550,\"journal\":{\"name\":\"2018 International Workshop on Antenna Technology (iWAT)\",\"volume\":\"10 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2018-03-05\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"5\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"2018 International Workshop on Antenna Technology (iWAT)\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/IWAT.2018.8379198\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"2018 International Workshop on Antenna Technology (iWAT)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/IWAT.2018.8379198","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
An S band tracking receiver LNA for satellite communications
A novel implementation of a Pseudomorphic High Electron Mobility Transistor (pHEMT) Low Noise Amplifier (LNA) for use in satellite communications tracking receiver is presented in this paper. The proposed design is of a single stage LNA working between frequency range of 2000 MHz to 2200 MHz. The designed LNA exhibit a Noise Figure (NF) of 0.320 dB which is less than the available pHEMT S Band LNA designs along with a transducer gain greater than 10dB. The Voltage Standing Wave Ratio (VSWR) of the designed and simulated LNA is 1:1.324. Simulation and measurements are taken in Advanced System Design (ADS) software. The circuit is designed and simulated using FR4 PCB laminate.
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