Self-Assembled InAsP and lnAlAs Nanowires on Graphene Via Pseudo-Van Der Waals Epitaxy

Vertically-aligned, high aspect ratio In $\text{InAs}_{y}\mathrm{P}_{1-y}, \text{In}_{x}\text{Al}_{1-x}\text{As}$, and core-shell InAsP-InP nanowires (NWs) are grown directly on two-dimensional (2-D) monolayer graphene via seed-free pseudo-van der Waals epitaxy (vdWE), as reported here for the first time. Growth is achieved using metalorganic chemical vapor deposition (MOCVD). By altering growth temperature and molar flow ratio of precursors, the composition Of $\text{InAs}_{y}\mathrm{P}_{1-y}$ NWs can be tuned within the $1\leq y\leq 0.8$ range. Similarly, by tuning the group-III precursor flow rates, $\text{In}_{x}\text{Al}_{1-x}$ As composition can be modified in the $1 < x < 0.5$ range. NW morphology and NW array number density variances are measured for different ternary compositions as functions of precursor flow rates and growth temperature.