隔离升压DC-DC转换器的拓扑选择类型

V. Kolosov, Y. Sokol, Yevhen Vasechko
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引用次数: 0

摘要

在电源电压两倍变化的范围内,研究了六种拓扑类型的隔离型Boost DC-DC变换器的有源元件(晶体管、二极管)的功率损耗。考虑了各拓扑在脉冲占空比工作值区间上的切换过程,确定了各拓扑有功单元功率损耗比较的条件。采用等效单元法对各单元的功率损耗进行比较,保证了拓扑结构的等效性。给出了电流形状因子的解析表达式,以及在固定和变化电源电压下晶体管和二极管的相对功率损耗的解析和图形依赖关系。对比分析了各元件的功率损耗,结果表明,最有效的是变流器的三相拓扑结构。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
Selection Types Of Topologies Of Isolated Boost DC-DC Converters
The study of power losses in active elements (transistors, diodes) of six types of topologies of isolated Boost DC-DC converters with two-phase and three-phase versions in the range of two-fold change in the supply voltage has been carried out. The switching processes in topologies on the intervals of working values of the pulse duty cycle are considered and the conditions for comparing the power losses in the active elements of the topologies are determined. Comparison of the power losses in the elements was carried out by the method of the equivalent element, which ensures the equivalence of the topologies. Analytical expressions are given for the current shape factor, as well as analytical and graphical dependences of the relative power losses in transistors and diodes at a fixed and varying supply voltage. Comparative analysis of power losses in the elements showed that the most effective are three-phase topologies of converters.
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