深亚微米完全耗尽SOI BJMOSFET频率特性的建模与仿真

2012 IEEE Symposium on Robotics and Applications (ISRA) Pub Date : 2012-06-03 DOI:10.1109/ISRA.2012.6219141

Zhang Yan, Zeng Yun

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摘要

从理论上提出了深亚微米完全耗尽SOI BJMOSFET的高频模型，并利用HSPICE软件绘制了其频率特性曲线。与相同条件下的深亚微米完全耗尽SOI MOSFET相比，新型SOI器件具有更好的频率特性和更快的工作速度。是一种新型的优良SOI器件。

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The modeling and simulation of the frequency characteristics on deep-submicron fully depleted SOI BJMOSFET

The high frequency model of deep-submicron fully depleted SOI BJMOSFET has been proposed theoretically and its frequency characteristics curves have been achieved by HSPICE software. Compared to deep-submicron fully depleted SOI MOSFET at the same condition, it's proved that the new-style SOI device has much better frequency characteristics and more rapid working speed. So it's a kind of new excellent SOI device.

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2012 IEEE Symposium on Robotics and Applications (ISRA)

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