一种差分SiGe功率放大器，用于宽带无线应用，采用硅通孔和包络跟踪

2014 IEEE Bipolar/BiCMOS Circuits and Technology Meeting (BCTM) Pub Date : 2014-12-11 DOI:10.1109/BCTM.2014.6981302

J. Tsay, M. Sapp, Michael Phamvu, T. Hall, Ryan Geries, Yan Li, Jerry Lopez, D. Lie

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引用次数: 1

摘要

本文采用双极差分对设计了一种SiGe差分功率放大器(PA)，其尺寸为0.35 μm SiGe，采用通硅通孔(TSV)技术。使用连续波(CW)和长期演进(LTE)调制波形进行测量，观察到显著的增益扩展(3-5 dB)。电源电压分别为2.8V / 3.3V / 4.2V，连续波输入为800 MHz, Pout = 25.6 / 25.4 / 25.7 dBm时，PA的功率附加效率(PAE)为61.7% / 51.2% / 40.0%。在包络跟踪(ET)技术的帮助下，在Pout = 19.9 / 22.1 / 22.4 dBm的功率回离区域，与固定电源的PAE相比，测量到的PAE分别提高了7.3% / 10.4% / 15.4%，在LTE 16QAM 5mhz的800 MHz频段实现了38.4% / 43.4% / 38.6%的PAE，并且在没有预失真的情况下通过了LTE频谱发射掩模(SEM)。这种SiGe ET-PA有望作为中功率(MP) PA运行，以提高回退区域的效率。

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A differential SiGe power amplifier using through-silicon-via and envelope-tracking for broadband wireless applications

In this paper, a differential SiGe power amplifier (PA) is designed using a bipolar differential pair in a 0.35-μm SiGe BiCMOS technology with through-silicon-via (TSV). Measured using continuous wave (CW) and Long Term Evolution (LTE) modulated waveforms, significant gain expansion (3-5 dB) is observed. The PA reaches power-added-efficiency (PAE) of 61.7% / 51.2% / 40.0% at Pout = 25.6 / 25.4 / 25.7 dBm at supply voltages of Vcc = 2.8V / 3.3V / 4.2V, respectively, with 800 MHz CW input. With the help of the envelope-tracking (ET) technique, the measured PAE improves by 7.3% / 10.4% / 15.4% compared to the fixed supply PA at power back-off regions at Pout = 19.9 / 22.1 / 22.4 dBm, achieving PAE of 38.4% / 43.4% / 38.6% at 800 MHz for LTE 16QAM 5 MHz and passing the LTE spectrum emission mask (SEM) without predistortion. This SiGe ET-PA shows promise for operation as the medium power (MP) PA for efficiency enhancement in the back-off regions.

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来源期刊

2014 IEEE Bipolar/BiCMOS Circuits and Technology Meeting (BCTM)

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