二氧化硅衬底上无催化剂CVD合成ZnO纳米线网络及其光响应

Wenqiang Lu, Zhaoyao Zhan, Liping Xu, Hongliang Cui
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引用次数: 0

摘要

采用无催化剂化学气相沉积法在SiO2/Si衬底上直接合成了高纯ZnO纳米线网络。我们通过反应离子刻蚀法生长单晶ZnO纳米线网络,制备了一个粗糙的SiO2/Si衬底表面,ZnO纳米线网络可以在RIE刻蚀区生长,而不需要任何预沉积的金属催化剂或种子层。在SiO2/Si衬底上制备的ZnO纳米线具有良好的晶体质量,六方纤锌矿相结构缺陷较少,可以自由转移到制作紫外光电探测器,具有良好的光电流性能和响应速度。此外,我们在这里展示的紫外光电探测器的制作方法,将大大降低纳米器件制作工艺的复杂性,并大力促进ZnO纳米结构在纳米电子学和光电子学中的应用。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
Catalyst-free CVD synthesis of ZnO nanowire networks on SiO2 substrate and its photoresponse
High-purity ZnO nanowire networks were directly synthesized on SiO2/Si substrates via catalyst-free chemical vapor deposition. we grow single-crystal ZnO nanowire networks through the reactive ion etching make a rough SiO2/Si substrate surface, which ZnO nanowire networks can grow in the RIE etched area and do not need any pre-deposited metal catalyst or seed layer. The as-grown ZnO nanowire networks achieved on SiO2/Si substrates have good crystal quality with the hexagonal wurtzite phase containing very less structural defects and transfer-free to fabricate UV photodetector, which showed high performance in photocurrent and response speed. Moreover, the fabrication of UV photodetector method we showed here, which would dramatically lower the complexity of the nanodevice fabrication processes and vigorously promot the application of ZnO nanostructures in nanoelectronics and optoelectronics.
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