一种新型接触场极板在漏极扩展mosfet晶体管中的应用

2017 29th International Symposium on Power Semiconductor Devices and IC's (ISPSD) Pub Date : 2017-05-01 DOI:10.23919/ISPSD.2017.7988957

Lin Wei, Cheng Chao, U. Singh, Ruchil Jain, Li Leng Goh, P. R. Verma

{"title":"一种新型接触场极板在漏极扩展mosfet晶体管中的应用","authors":"Lin Wei, Cheng Chao, U. Singh, Ruchil Jain, Li Leng Goh, P. R. Verma","doi":"10.23919/ISPSD.2017.7988957","DOIUrl":null,"url":null,"abstract":"A new kind of field plate as contact field plate is fabricated for hot carrier injection improvement, significant decrease in the specified on resistance degradation is observed without substantially affecting the breakdown voltage of devices. Charge pumping method and simulation are carried out to study the degradation mechanism. Our results clearly show that the application of contact field plate can improve the device robustness in terms of hot carrier injection.","PeriodicalId":202561,"journal":{"name":"2017 29th International Symposium on Power Semiconductor Devices and IC's (ISPSD)","volume":"8 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2017-05-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"6","resultStr":"{\"title\":\"A novel contact field plate application in drain-extended-MOSFET transistors\",\"authors\":\"Lin Wei, Cheng Chao, U. Singh, Ruchil Jain, Li Leng Goh, P. R. Verma\",\"doi\":\"10.23919/ISPSD.2017.7988957\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"A new kind of field plate as contact field plate is fabricated for hot carrier injection improvement, significant decrease in the specified on resistance degradation is observed without substantially affecting the breakdown voltage of devices. Charge pumping method and simulation are carried out to study the degradation mechanism. Our results clearly show that the application of contact field plate can improve the device robustness in terms of hot carrier injection.\",\"PeriodicalId\":202561,\"journal\":{\"name\":\"2017 29th International Symposium on Power Semiconductor Devices and IC's (ISPSD)\",\"volume\":\"8 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2017-05-01\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"6\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"2017 29th International Symposium on Power Semiconductor Devices and IC's (ISPSD)\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.23919/ISPSD.2017.7988957\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"2017 29th International Symposium on Power Semiconductor Devices and IC's (ISPSD)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.23919/ISPSD.2017.7988957","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}

引用次数: 6

摘要

为了改进热载子注入，制作了一种新型的场板作为接触场板，在不显著影响器件击穿电压的情况下，显著降低了规定的电阻退化。采用电荷泵送方法和仿真研究了其降解机理。我们的研究结果清楚地表明，在热载流子注入方面，应用接触场板可以提高器件的鲁棒性。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

查看原文本刊更多论文

A novel contact field plate application in drain-extended-MOSFET transistors

A new kind of field plate as contact field plate is fabricated for hot carrier injection improvement, significant decrease in the specified on resistance degradation is observed without substantially affecting the breakdown voltage of devices. Charge pumping method and simulation are carried out to study the degradation mechanism. Our results clearly show that the application of contact field plate can improve the device robustness in terms of hot carrier injection.

求助全文

通过发布文献求助，成功后即可免费获取论文全文。去求助

来源期刊

2017 29th International Symposium on Power Semiconductor Devices and IC's (ISPSD)

自引率

0.00%

发文量