{"title":"基于δ - σ调制CSCD的S类功率放大器","authors":"Nishant Kumar, Jai Datt Poonia, K. Rawat","doi":"10.1109/AEMC.2017.8325756","DOIUrl":null,"url":null,"abstract":"This paper presents the digital transmitter architecture using Class S power amplifier (PA) based on GaN HEMT transistor. In order to overcome the efficiency degradation problem in amplification of envelope varying signal, delta-sigma modulation scheme is used along with Class S power amplifier. The proposed Class S architecture is based on current switching Class D power amplifier which is designed and fabricated at 2 GHz. The result shows that the drain efficiency of 71.5% and gain of 11.6 dB is obtained at peak output power. LTE signal of 5 MHz band is used as an input to delta-sigma modulator for validating the functionality of Class S PA design.","PeriodicalId":397541,"journal":{"name":"2017 IEEE Applied Electromagnetics Conference (AEMC)","volume":"92 Suppl 2 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2017-12-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"2","resultStr":"{\"title\":\"Class S power amplifier based on CSCD with delta-sigma modulation\",\"authors\":\"Nishant Kumar, Jai Datt Poonia, K. Rawat\",\"doi\":\"10.1109/AEMC.2017.8325756\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"This paper presents the digital transmitter architecture using Class S power amplifier (PA) based on GaN HEMT transistor. In order to overcome the efficiency degradation problem in amplification of envelope varying signal, delta-sigma modulation scheme is used along with Class S power amplifier. The proposed Class S architecture is based on current switching Class D power amplifier which is designed and fabricated at 2 GHz. The result shows that the drain efficiency of 71.5% and gain of 11.6 dB is obtained at peak output power. LTE signal of 5 MHz band is used as an input to delta-sigma modulator for validating the functionality of Class S PA design.\",\"PeriodicalId\":397541,\"journal\":{\"name\":\"2017 IEEE Applied Electromagnetics Conference (AEMC)\",\"volume\":\"92 Suppl 2 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2017-12-01\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"2\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"2017 IEEE Applied Electromagnetics Conference (AEMC)\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/AEMC.2017.8325756\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"2017 IEEE Applied Electromagnetics Conference (AEMC)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/AEMC.2017.8325756","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
Class S power amplifier based on CSCD with delta-sigma modulation
This paper presents the digital transmitter architecture using Class S power amplifier (PA) based on GaN HEMT transistor. In order to overcome the efficiency degradation problem in amplification of envelope varying signal, delta-sigma modulation scheme is used along with Class S power amplifier. The proposed Class S architecture is based on current switching Class D power amplifier which is designed and fabricated at 2 GHz. The result shows that the drain efficiency of 71.5% and gain of 11.6 dB is obtained at peak output power. LTE signal of 5 MHz band is used as an input to delta-sigma modulator for validating the functionality of Class S PA design.
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