面向射频应用的全晶体振荡器集成

2010 IEEE International Frequency Control Symposium Pub Date : 2010-06-01 DOI:10.1109/FREQ.2010.5556375

P. Tinguy, F. Lardet-Vieudrin, B. Dulmet, J. Leost, L. Couteleau

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引用次数: 0

摘要

本文介绍了一种工作在3.3V电源下的集成振荡器的性能，并通过数字选择扩展到OCXO。它是在奥地利微系统公司的标准0.35 μ m SiGe BiCMOS技术中实现的。在40兆赫下进行了一些实验表征，结果与仿真结果吻合良好。然后使用该模具在硅衬底(8.5×8.5 mm2)上开发小型化XO设计。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

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Toward full crystal oscillator integration for RF applications

This paper presents the performances of an integrated oscillator working at 3.3V power supply for XO applications, extended to OCXO by digital selections. It is realized in a standard 0.35µm SiGe BiCMOS technology from austriamicrosystems AG®. Some experimental characterizations have been performed at 40 MHz and give good agreement with simulations. This die is then used to develop a miniaturized XO design on silicon substrate (8.5×8.5 mm2).

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2010 IEEE International Frequency Control Symposium

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