{"title":"门控n/sup +/多晶硅场发射极阵列的制备与表征","authors":"H. Uh, S. Kwon, J. Lee, H. S. Park","doi":"10.1109/IVMC.1996.601855","DOIUrl":null,"url":null,"abstract":"Field emission characteristics from n/sup +/ polycrystalline silicon (poly-Si) field emitters fabricated on an insulating layer are presented and compared with those from single crystal silicon field emitters. SEM micrographs of fabricated poly-Si emitters showed poor uniformity in structure due to the oxide thickness deviation associated with grain boundaries of poly-Si in sharpening oxidation step. The anode current of 0.1 /spl mu/A/tip was measured at the gate bias of 82 V from 625 poly-Si tips with gate hole diameter of 1.2 /spl mu/m and 80 V from 625 single crystal Si tips with diameter of 1.6 /spl mu/m, respectively.","PeriodicalId":384104,"journal":{"name":"9th International Vacuum Microelectronics Conference","volume":"71 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"1996-07-07","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"1","resultStr":"{\"title\":\"Fabrication and characterization of gated n/sup +/ polycrystalline silicon field emitter arrays\",\"authors\":\"H. Uh, S. Kwon, J. Lee, H. S. Park\",\"doi\":\"10.1109/IVMC.1996.601855\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"Field emission characteristics from n/sup +/ polycrystalline silicon (poly-Si) field emitters fabricated on an insulating layer are presented and compared with those from single crystal silicon field emitters. SEM micrographs of fabricated poly-Si emitters showed poor uniformity in structure due to the oxide thickness deviation associated with grain boundaries of poly-Si in sharpening oxidation step. The anode current of 0.1 /spl mu/A/tip was measured at the gate bias of 82 V from 625 poly-Si tips with gate hole diameter of 1.2 /spl mu/m and 80 V from 625 single crystal Si tips with diameter of 1.6 /spl mu/m, respectively.\",\"PeriodicalId\":384104,\"journal\":{\"name\":\"9th International Vacuum Microelectronics Conference\",\"volume\":\"71 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"1996-07-07\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"1\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"9th International Vacuum Microelectronics Conference\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/IVMC.1996.601855\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"9th International Vacuum Microelectronics Conference","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/IVMC.1996.601855","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
Fabrication and characterization of gated n/sup +/ polycrystalline silicon field emitter arrays
Field emission characteristics from n/sup +/ polycrystalline silicon (poly-Si) field emitters fabricated on an insulating layer are presented and compared with those from single crystal silicon field emitters. SEM micrographs of fabricated poly-Si emitters showed poor uniformity in structure due to the oxide thickness deviation associated with grain boundaries of poly-Si in sharpening oxidation step. The anode current of 0.1 /spl mu/A/tip was measured at the gate bias of 82 V from 625 poly-Si tips with gate hole diameter of 1.2 /spl mu/m and 80 V from 625 single crystal Si tips with diameter of 1.6 /spl mu/m, respectively.
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