cfet -一种新型的高品质MMIC控制器件

IEEE 1995 Microwave and Millimeter-Wave. Monolithic Circuits Symposium. Digest of Papers Pub Date : 1995-05-15 DOI:10.1109/MCS.1995.470983

D. Seymour, R. Coats, R. Lehmann, J. Helvey

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引用次数: 0

摘要

介绍了一种用于微波单片控制电路的新型砷化镓器件。该器件被称为控制场效应晶体管，通过使用位于源漏通道后面的栅极来实现控制，从而消除了对传统亚微米栅极的需要。由此产生的电容比传统MESEET小，与传统MESEET的250 GHz相比，其性能值为800 GHz。通过SPDT开关的测量性能证明了该器件的功能，该开关在DC -10.0 ghz频段提供0.35 db插入损耗和20 db隔离

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CFET-a new high quality MMIC control device

A new GaAs device developed for use in microwave monolithic control circuitry has been demonstrated. Known as a CFET, for Control Field Effect Transistor, this device eliminates the need for a conventional submicron gate by achieving control by use of a gate located behind the source-drain channel. The resulting capacitance is smaller than a conventional MESEET, resulting in a figure of merit of 800 GHz as compared to 250 GHz for a conventional MESFET. The device capabilities are demonstrated by measured performance of a SPDT switch providing 0.35-dB insertion loss and 20-dB isolation over the DC -10.0-GHz frequency band.<>

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来源期刊

IEEE 1995 Microwave and Millimeter-Wave. Monolithic Circuits Symposium. Digest of Papers

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