碳纳米管电路的定时驱动放置

Chen Wang, Li Jiang, Shiyan Hu, Tianjian Li, Xiaoyao Liang, Naifeng Jing, Weikang Qian
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引用次数: 2

摘要

碳纳米管场效应晶体管(cnfet)是一种以碳纳米管(CNTs)作为晶体管通道的晶体管,是传统CMOS技术的有前途的替代品。然而,由于碳纳米管的随机组装过程,每个CNFET中碳纳米管的数量变化很大,导致了巨大的电路延迟变化和时序良率下降。为了克服这个问题,我们提出了一种CNFET电路的时序驱动放置方法。它利用了CNFET电路的一个独特特征,即不对称空间相关性:沿着CNT生长方向的CNFET在电学性质方面高度相关。我们的方法在全局和详细放置阶段将相同关键路径的cnfet分布到垂直于CNT生长方向的不同行,同时优化这些关键路径的时间。实验结果表明,我们的方法降低了电路延迟的平均值和方差,从而提高了时序良率。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
Timing-driven placement for carbon nanotube circuits
Carbon nanotube field effect transistors (CNFETs), which use carbon nanotubes (CNTs) as the transistor channel, are promising substitution of conventional CMOS technology. However, due to the stochastic assembly process of CNTs, the number of CNTs in each CNFET has a large variation, resulting in a vast circuit delay variation and timing yield degradation. To overcome it, we propose a timing-driven placement method for CNFET circuits. It exploits a unique feature of CNFET circuits, namely, asymmetric spatial correlation: CNFETs that lie along the CNT growth direction are highly correlated in terms of their electrical properties. Our method distributes CNFETs of the same critical paths to different rows perpendicular to the CNT growth direction during both global and detailed placement phases, while optimizing the timing of these critical paths. Experimental results demonstrated that our approach reduces both the mean and the variance of circuit delay, leading to an improvement in timing yield.
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