高psr CMOS LDO嵌入纹波前馈和节能带宽扩展

Liuyan Chen, Qi Cheng, Jianping Guo, Min Chen
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引用次数: 6

摘要

提出并设计了一种采用0.18 μm CMOS工艺,在宽频率范围内具有高电源纹波抑制(PSR)的CMOS低差稳压器(LDO)。针对能源自主生物医学植入物的应用,具有结构简单、功耗低的特点。提出的嵌入式电源纹波前馈技术实现了低频范围内的高PSR。此外,通过采用节能的双零补偿网络,PSR带宽提高到几MHz。采用4.7 μ f陶瓷输出电容,在最大负载条件下(即25 mA),模拟的PSR在DC - 10 kHz范围内不小于-86 dB,在10 MHz范围内优于-63 dB。静态电流仅为10 μA。线路和负载规定分别为0.5 mV/V @ 25ma负载和0.14 mV/mA @ 1.3 V Vin。当负载电流在0 ~ 25ma之间变化时,过调和欠调电压均小于2mv。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
High-PSR CMOS LDO with embedded ripple feedforward and energy-efficient bandwidth extension
A CMOS low-dropout regulator (LDO) with high power-supply ripple rejection (PSR) across a wide frequency range is presented and designed in 0.18-μm CMOS technology. Targeting for the application of energy-autonomous biomedical implants, it has a very simple structure and features low power consumption. The high PSR in low frequency range is realized by the proposed embedded supply ripple feed-forward technique. Moreover, the PSR bandwidth is improved up to several MHz by adopting an energy-efficient double zero compensation network. With a 4.7-μF ceramic output capacitor, in the maximum loading condition (i.e., 25 mA), the simulated PSR is no less than -86 dB from DC to 10 kHz, and better than -63 dB up to 10 MHz. The quiescent current is just 10 μA. The line and load regulations are 0.5 mV/V @ 25-mA loading and 0.14 mV/mA @ 1.3-V Vin, respectively. The overshoot and undershoot voltages are less than 2 mV when loading current changes between 0 and 25 mA.
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