集成光电器件的三维仿真

IEEE/LEOS 3rd International Conference on Numerical Simulation of Semiconductor Optoelectronic Devices, 2003. Proceedings Pub Date : 2003-10-14 DOI:10.1109/NUSOD.2003.1259060

N. Trenado, J. Henness, L. Johansson, J. Hutchinson, L.A. Coldoren, J. Piprek

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引用次数: 0

摘要

对集成光-电-光波长转换器内的光子元件进行了三维仿真。转换器设计包括一个50 /spl mu/m长的波导光电二极管(WPD)，它可以检测C波段任何波长的输入信号，例如at /spl lambda//sub / = 1530 nm。光信号被转换成电信号，直接调制采样光栅分布式布拉格反射器(SGDBR)激光二极管，该二极管与半导体光放大器(SOA)集成以增强信号。SGDBR激光器可以调谐到C波段的任何波长发射，例如，at /spl λ //sub - out/ = 1550 nm。发现不同元件的外延结构相似。偏移多量子阱(MQW)有源区域生长在波导区域的顶部。脊波导结构通过MQW区域蚀刻。无源器件部分是通过完全蚀刻mqw形成的。

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3D simulation of integrated optoelectronic devices

A three-dimensional (3D) simulation of the photonic components within an integrated optical-electrical-optical wavelength converter is presented. The converter design includes a 50 /spl mu/m long waveguide photodiode (WPD) which detects the incoming signal at any wavelength of the C band, e.g. at /spl lambda//sub in/ = 1530 nm. The optical signal is converted into an electrical signal that directly modulates a sampled-grating distributed Bragg-reflector (SGDBR) laser diode which is integrated with a semiconductor optical amplifier (SOA) for signal enhancement. The SGDBR laser can be tuned to emit at any wavelength of the C band, e.g., at /spl lambda//sub out/ = 1550 nm. The epitaxial structure of the different components is found to be similar. An offset multi-quantum-well (MQW) active region is grown on top of the waveguide region. A ridge waveguide structure is etched through the MQW region. Passive device sections are formed by etching off the MQWs completely.

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IEEE/LEOS 3rd International Conference on Numerical Simulation of Semiconductor Optoelectronic Devices, 2003. Proceedings

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