一种利用微架构冗余延长缓存SRAM寿命的主动磨损恢复方法

Jeonghee Shin, V. Zyuban, P. Bose, T. Pinkston
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引用次数: 110

摘要

微架构冗余被认为是提高芯片寿命可靠性的一种手段。它通常以反应方式使用,允许芯片在故障存在时保持可操作性,通过检测和隔离,纠正和/或在出现故障后先到先服务的基础上更换组件。在本文中,我们探索了一种替代的,更优选的方法来利用微架构冗余来提高芯片的寿命可靠性。在我们提出的方法中,冗余被主动使用,允许无故障的微架构组件暂时停用,在旋转的基础上,暂停和/或从某些磨损效应中恢复。这种方法通过避免磨损故障的发生而不是事后对其作出反应,提高了芯片寿命的可靠性。应用于片上缓存SRAM以对抗nbti引起的磨损故障,我们的主动磨损恢复方法将缓存的寿命可靠性(以平均故障时间衡量)提高了大约七倍,相对于不使用微架构冗余,相对于具有类似面积开销的冗余的传统反应性使用提高了五倍。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
A Proactive Wearout Recovery Approach for Exploiting Microarchitectural Redundancy to Extend Cache SRAM Lifetime
Microarchitectural redundancy has been proposed as a means of improving chip lifetime reliability. It is typically used in a reactive way, allowing chips to maintain operability in the presence of failures by detecting and isolating, correcting, and/or replacing components on a first-come, first-served basis only after they become faulty. In this paper, we explore an alternative, more preferred method of exploiting microarchitectural redundancy to enhance chip lifetime reliability. In our proposed approach, redundancy is used proactively to allow non-faulty microarchitecture components to be temporarily deactivated, on a rotating basis, to suspend and/or recover from certain wearout effects. This approach improves chip lifetime reliability by warding off the onset of wearout failures as opposed to reacting to them posteriorly. Applied to on-chip cache SRAM for combating NBTI-induced wearout failure, our proactive wearout recovery approach increases lifetime reliability (measured in mean-time-to-failure) of the cache by about a factor of seven relative to no use of microarchitectural redundancy and a factor of five relative to conventional reactive use of redundancy having similar area overhead.
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