横向Si/SiO2界面陷阱对扇形SD-MAGFET磁灵敏度影响的数值研究

Zhenyi Yang, C. Leung, P. Lai, P. Pong
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引用次数: 0

摘要

本文详细研究了扇形SD-MAGFET侧壁Si/SiO2界面陷阱的影响。电离的受体陷阱像负氧化物电荷一样工作,通过耗尽传导通道来增强器件的磁感,但电离的供体陷阱像正氧化物电荷一样工作,通过在侧壁诱导寄生通道来削弱磁感。特别是,受体或供体陷阱的密度越高,对磁灵敏度的影响越强。此外,陷阱能量也影响灵敏度,靠近价带或导带的陷阱影响更大。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
A numerical investigation on effects of lateral Si/SiO2 interface traps on magnetic sensitivity of sectorial SD-MAGFET
This work studies the influence of the Si/SiO2 interface traps at the sidewall of sectorial SD-MAGFET in detail. Ionized acceptor traps work like negative oxide charges to enhance the magnetic sensing of the device by depleting the conduction channel, but ionized donor traps behave like positive oxide charges to weaken the magnetic sensing by inducing a parasitic channel at the sidewall. In particular, the higher the density of the acceptor or donor traps, the stronger is the effect on the magnetic sensitivity. Moreover, the trap energy also affects the sensitivity, with larger effect for traps lying closer to the valence or conduction band.
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