M. Chinthavali, Hui Zhang, L. Tolbert, B. Ozpineci
{"title":"基于sic的逆变器技术进展","authors":"M. Chinthavali, Hui Zhang, L. Tolbert, B. Ozpineci","doi":"10.1109/COBEP.2009.5347590","DOIUrl":null,"url":null,"abstract":"This paper presents a study of Silicon Carbide (SiC) technology which includes device characterization and modeling, inverter simulation, and test results for several prototype inverters. The static and dynamic characteristics of discrete devices and half bridge modules are presented. Test results of a 55 kW hybrid inverter with SiC Schottky diodes and an 18 kW all-SiC inverter using SiC JFETs and Schottky diodes are demonstrated.","PeriodicalId":183864,"journal":{"name":"2009 Brazilian Power Electronics Conference","volume":"133 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2009-12-04","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"19","resultStr":"{\"title\":\"Update on SiC-based inverter technology\",\"authors\":\"M. Chinthavali, Hui Zhang, L. Tolbert, B. Ozpineci\",\"doi\":\"10.1109/COBEP.2009.5347590\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"This paper presents a study of Silicon Carbide (SiC) technology which includes device characterization and modeling, inverter simulation, and test results for several prototype inverters. The static and dynamic characteristics of discrete devices and half bridge modules are presented. Test results of a 55 kW hybrid inverter with SiC Schottky diodes and an 18 kW all-SiC inverter using SiC JFETs and Schottky diodes are demonstrated.\",\"PeriodicalId\":183864,\"journal\":{\"name\":\"2009 Brazilian Power Electronics Conference\",\"volume\":\"133 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2009-12-04\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"19\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"2009 Brazilian Power Electronics Conference\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/COBEP.2009.5347590\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"2009 Brazilian Power Electronics Conference","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/COBEP.2009.5347590","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
This paper presents a study of Silicon Carbide (SiC) technology which includes device characterization and modeling, inverter simulation, and test results for several prototype inverters. The static and dynamic characteristics of discrete devices and half bridge modules are presented. Test results of a 55 kW hybrid inverter with SiC Schottky diodes and an 18 kW all-SiC inverter using SiC JFETs and Schottky diodes are demonstrated.
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