不同退火温度对聚偏氟乙烯-三氟乙烯薄膜形态和介电性能的影响

M. Rozana, M. Wahid, A. Arshad, M. N. Sarip, Z. Habibah, L. N. Ismail, M. Rusop, Wan Haliza Abd Majid, W. C. Gan
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引用次数: 6

摘要

采用非接触原子力显微镜(AFM)研究了不同退火温度下PVDF-TrFE(70/30)薄膜的形貌。采用差示扫描量热法(DSC)测定了PVDF-TrFE的TC、Tm和TCrys。根据观察到的DSC热像图,对制备的自旋涂覆PVDF-TrFE(70/30)薄膜在TC(113℃)、Tm(154℃)、TCrys(135℃)和TC(55℃)下进行退火。利用阻抗谱法研究了薄膜的介电特性,从而证实了薄膜的电学行为。结果表明,薄膜在不同的退火温度下呈现出不同的形貌。在Tm和Tm以上退火后,观察到针状晶体结构的形成。在TC下再结晶的薄膜在104 hz时的最佳介电常数为~7.8。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
Effect of various annealing temperature on the morphological and dielectric properties of Polyvinylidenefluoride-Trifluoroethylene thin film
The morphology of PVDF-TrFE (70/30) thin film at various annealing temperature were investigated using non-contact mode Atomic Force Microscopy (AFM). Differential Scanning Calorimetry (DSC) technique was used to obtain TC, Tm, and TCrys of PVDF-TrFE. The prepared spin coated PVDF-TrFE (70/30) thin films were annealed at TC (113°C), Tm (154°C), TCrys (135°C) and Tc at cooling (55°C) in accordance to the DSC thermogram observed. Impedance Spectroscopy were conducted to study the dielectric characteristic of the thin films in order to substantiate the electrical behavior of the thin films From the results obtained, the thin films exhibited different morphologies depending on the annealing temperatures utilized. Formation of needle-like crsytallite structure was observed film annealed at and over Tm. Thin film re-crystallized at TC has an optimized dielectric constant of ~7.8 at 104 hz.
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