基于LECTOR的CMOS电路的漏功率和延迟分析

Preeti Verma, R. Mishra
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引用次数: 42

摘要

在CMOS电路中,阈值电压的缩放会导致亚阈值泄漏电流的增大。根据国际半导体路线图(ITRS),泄漏预计将在未来十年呈指数级增长。LECTOR是一种设计CMOS栅极的技术,目的是在不影响动态功耗的情况下减小漏电流。本文分析了采用LECTOR技术的基本CMOS门,即非门、NAND门和NOR门的漏电流和传播延迟。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
Leakage power and delay analysis of LECTOR based CMOS circuits
In CMOS circuits, scaling of threshold voltage results in increase of sub-threshold leakage current. According to the International Roadmap of Semiconductor (ITRS), leakage is projected to grow exponentially during the next decade. LECTOR is a technique for designing CMOS gates in order to reduce the leakage current without affecting the dynamic power dissipation. This paper presents the analysis for leakage current and propagation delay of the basic CMOS gates viz. NOT, NAND and NOR gates implementing LECTOR technique.
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