电镀Cu薄膜中空位缺陷的直接观察

Proceedings of the IEEE 2004 International Interconnect Technology Conference (IEEE Cat. No.04TH8729) Pub Date : 2004-06-07 DOI:10.1109/IITC.2004.1345697

T. Suzuki, Akira Uedono, Tomoji Nakamura, Y. Mizushima, H. Kitada, Y. Koura

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引用次数: 1

摘要

利用正电子湮没和高角环形暗场扫描透射电子显微镜(HAADF-STEM)研究了电镀Cu薄膜中的空位缺陷。空位的演化随退火温度的变化可分为两个区域。当温度低于300℃时，空位的行为与晶粒生长密切相关。当退火温度超过300/spl℃时，空位浓度估计为10/sup 19/ /spl sim/10/sup 20//cm/sup 3/数量级，这与应力诱导空化(SIV)失效时的空位体积估计相似。

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Direct observation of vacancy defects in electroplated Cu films

Vacant defects in electroplated Cu films are investigated by positron annihilation and high-angle annular dark-field scanning transmission electron microscopy (HAADF-STEM). The evolution of vacancies was divided into two regions with respect to the annealing temperature. For temperature below 300/spl deg/C, the behavior of vacancies was closely related to grain growth. When the annealing temperature was over 300/spl deg/C, the vacancy concentration was estimated to be of the order of 10/sup 19/ /spl sim/10/sup 20//cm/sup 3/, which is similar to void volume estimates in stress induced voiding (SIV) failure.

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Proceedings of the IEEE 2004 International Interconnect Technology Conference (IEEE Cat. No.04TH8729)

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