氧等离子体灰化法选择性各向异性干蚀刻压电丝微结构

D. V. S. K. Gunapu, J. Joseph, S. Singh, S. Vanjari
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引用次数: 1

摘要

从家蚕蚕茧中提取的丝素聚合物的微图案在实现基于丝素的MEMS和植入式生物医学微器件方面具有广泛的应用。在目前的研究中,提出了一种非常简单和直接的基于众所周知的干蚀刻的微图纹方法。采用低压氧等离子体灰化技术实现了丝质微结构的干刻蚀。利用光刻技术制作钛基模板,将所需的微结构转移到丝膜上。通过对载体上的射频功率、等离子体持续时间和氧流量等干式刻蚀参数的优化,确定了最佳刻蚀配方。采用标准的计量技术测量了刻蚀速率和刻蚀均匀性。选择性完全去除丝绸,蚀刻速率为0.20瓮/分钟。采用优化后的干式蚀刻工艺,可获得最小特征尺寸为1.6µm的复杂图案。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
Selective Anisotropic Dry Etching of Piezoelectric Silk Microstructures Using Oxygen Plasma Ashing
Micro patterning of FDA approved Silk fibroin polymer derived from Bombyx mori cocoons has wide range of applications in realizing Silk based MEMS and implantable biomedical micro devices. In the present study, a very simple and straightforward micro-pattering approach based on well known dry etching has been presented. The dry etching of silk microstructures was achieved using low pressure oxygen plasma ashing technique. Titanium based stencil mask patterned using photolithography, was used to transfer the desired microstructures onto the silk film. The optimum etching recipe was determined by optimizing the dry etching parameters like RF power delivered onto the carrier, duration of plasma and the oxygen flow rate. The etch rate and the etch uniformity were measured using standard metrological techniques. Selective complete removal of silk with an etch rate of 0.20 urn/min has been reported. Using the optimized dry etching recipe, a complex pattern with minimum feature size of 1.6 µm was achieved.
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