在微波和毫米波器件阵列(MMDA)上使用0.1 /spl mu/m t栅PHEMT的Ka和w波段mmic

GaAs IC Symposium. IEEE Gallium Arsenide Integrated Circuit Symposium. 19th Annual Technical Digest 1997 Pub Date : 1997-10-12 DOI:10.1109/GAAS.1997.628286

J. Mondal, G. Dietz, K. Peterson, R. Haubenstricker, K. McReynolds, P. Laux, S. Moghe, P. Rice, L. Aina

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引用次数: 0

摘要

在常用的微波和毫米波器件阵列(MMDA)上，使用0.1 /spl mu/m的t栅工艺开发了各种Ka和w波段的mmic。与数字门阵列技术类似，MMDA方法有可能降低中、小容量系统中高性能MMIC插入的成本和周期时间(CCT)。在同一套MMDA上设计的各种类型的mmic具有广泛的性能范围;Ka频段本振功率为18-19 dBm, Ka频段振荡器功率为16-18 dBm, Ka和w频段混频器转换损耗为10-12 dB, 92 GHz时功率为9 dBm的46 - 92 GHz倍频器。

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Ka- and W-band MMICs on microwave and millimeterwave device arrays (MMDA) using 0.1 /spl mu/m T-gate PHEMT

A variety of Ka- and W-Band MMICs have been developed on common sets of Microwave and Millimeter-wave Device Arrays (MMDA) using a 0.1 /spl mu/m T-gate process. The MMDA approach, similar to digital gate array techniques, has the potential to reduce the cost and cycle time (CCT) of high performance MMIC insertions in low-to-medium volume systems. Various types of MMICs, designed on the same sets of MMDA, have a wide performance range; LO power of 18-19 dBm in Ka-band, oscillator power of 16-18 dBm in Ka band, mixer conversion loss of 10-12 dB in Ka- and W-bands, doubler of 46 to 92 GHz with 9 dBm power at 92 GHz.

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GaAs IC Symposium. IEEE Gallium Arsenide Integrated Circuit Symposium. 19th Annual Technical Digest 1997

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