噪声系数1.52-1.67dB的4级低噪声放大器

2022 International Conference on Microwave and Millimeter Wave Technology (ICMMT) Pub Date : 2022-08-12 DOI:10.1109/ICMMT55580.2022.10023404

Feng-yuan Mao, Bin Li, Zhijian Chen, Zhaohui Wu, Xiao-Ling Lin

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引用次数: 0

摘要

本文提出了一种采用$0.15\mu\ mathm {m}$氮化镓(GaN)工艺的23-27GHz MMIC低噪声放大器(LNA)。通过在级之间引入5元低q网络，所提出的4级LNA在带宽、噪声系数(NF)、增益和输入回波损失之间实现了良好的平衡。LNA的峰值增益为25.2dB，最小NF为1.52dB, 3db带宽为23 - 27GHz。输入回波损耗优于10 dB，输出回波损耗优于15 dB。LNA MMIC可以使用+5V直流电源供电，它消耗的总直流电流为30rna。整体芯片尺寸为2.7 $\ × 1.8\text{mm}^{2}$。

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A 4-stage Low-Noise Amplifier with 1.52-1.67dB Noise Figure

In this paper, a 23-27GHz MMIC low-noise amplifier (LNA) using $0.15\mu\mathrm{m}$ Gallium Nitride (GaN) process is proposed. By introducing a 5-element low-Q network between stages, the proposed 4-stage LNA achieves a good balance among bandwidth, noise figure (NF), gain and input return loss. The LNA exhibits a peak gain of 25.2dB and a minimum NF of 1.52dB with a 3-dB bandwidth from 23 to 27GHz. The input return loss and output return loss are better than 10 dB and 15 dB respectively. The LNA MMIC can be powered-up using a +5V DC power supply and it consumes total DC current of 30 rnA. The overall chip size is 2.7 $\times 1.8\text{mm}^{2}$.

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2022 International Conference on Microwave and Millimeter Wave Technology (ICMMT)

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