功能化模式对cntfet性能的影响

2014 International Workshop on Computational Electronics (IWCE) Pub Date : 2014-06-03 DOI:10.1109/IWCE.2014.6865832

M. Claus, D. Teich, S. Mothes, G. Seifert, Michael Schroter

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引用次数: 5

摘要

碳纳米管(CNTs)的共价功能化可能是优化碳纳米管场效应晶体管(fet)行为的一种选择[1](尽管存在所有相关的技术问题)。原则上，用于功能化的原子或分子沿着碳纳米管随机放置或在装饰图案中高度有序。本文只研究了高阶功能化模式(i)将金属碳纳米管转化为半导体碳纳米管和(ii)减少或增加半导体碳纳米管的双极性。

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Impact of functionalization patterns on the performance of CNTFETs

Covalent functionalization of carbon nanotubes (CNTs) might be an option to optimize the behavior of CNT field effect transistors (FETs) [1] (despite all related technological problems). In principle, the atoms or molecules used for functionalizing are placed randomly along the CNT or they are high-ordered in decoration patterns. Here, only high-ordered functionalization patterns are studied (i) to convert metallic CNTs into semiconducting CNTs and (ii) to reduce or to increase the ambipolarity of a semiconducting CNT.

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2014 International Workshop on Computational Electronics (IWCE)

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