空气退火改性化学沉积CdS薄膜的光学和电学性质

1998 Conference on Optoelectronic and Microelectronic Materials and Devices. Proceedings (Cat. No.98EX140) Pub Date : 1998-12-14 DOI:10.1109/COMMAD.1998.791680

E. Gluszak, S. Hinckley

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引用次数: 1

摘要

以乙酸镉和硫脲为Cd和S离子源，采用化学浴沉积法制备了多晶CdS薄膜。沉积的薄膜结晶度低，电阻率高(电导率/spl sim/10/sup -7/ /spl Omega//sup -1//spl middot/cm/sup -1/)，光敏性小。在100-400/spl℃下空气退火1小时，通过将CdS部分转化为CdO，将薄膜转化为n型。这是伴随着光电导率增加超过6个数量级。沉积薄膜的光学带隙>2.38 eV，经空气退火后降至/spl sim/2.24 eV。

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Optical and electrical properties of chemically deposited CdS thin films modified by air annealing

Polycrystalline CdS thin films have been grown by chemical bath deposition (CBD) using cadmium acetate and thiourea as the Cd and S ion sources. The as-deposited films show a low degree of crystallinity, are very resistive (conductivity /spl sim/10/sup -7/ /spl Omega//sup -1//spl middot/cm/sup -1/) and possess a small degree of photosensitivity. Air annealing of the films at 100-400/spl deg/C for 1 hr converts them to n-type through partial conversion of CdS to CdO. This is accompanied by an increase in the photoconductivity by more than 6 orders of magnitude. The optical bandgaps of the as-deposited films were >2.38 eV, which decreased to /spl sim/2.24 eV after air annealing.

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1998 Conference on Optoelectronic and Microelectronic Materials and Devices. Proceedings (Cat. No.98EX140)

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