利用动态偏置补偿GaN LNA中热效应导致的性能退化

J. Bremer, L. Hanning, N. Rorsman, M. Thorsell
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引用次数: 0

摘要

本文研究了在低噪声放大器中使用动态偏置控制方案来补偿由于热效应而导致的性能下降的可能性。该研究通过表征GaN MMIC LNA在- 25°C至75°C之间的偏置电压和温度依赖性来进行。在芯片温度升高的情况下,从增益、线性度和噪声方面来看,性能都有所下降。建立了非线性行为模型,并用于预测不同偏差和温度条件下的性能。确定了实现恒定增益和噪声系数随温度变化的偏置条件。增强的射频性能,改善增益和线性度,显示需要增加功率,并涉及改善噪声系数和增益之间的权衡。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
Compensation of Performance Degradation due to Thermal Effects in GaN LNA Using Dynamic Bias
This paper investigates the possibilities of using a dynamic bias control scheme for a low noise amplifier to compensate for performance degradation due to thermal effects. The study was performed by characterization of bias voltage and temperature dependence between −25°C to 75°C of a GaN MMIC LNA. The performance, in terms of gain, linearity and noise, degraded, at elevated chip temperatures. Nonlinear behavioral models were developed and used to predict performance for different bias and temperature conditions. Bias conditions to achieve constant gain and noise figure versus temperature are determined. Enhanced RF performance, with improved gain and linearity is demonstrated and is shown to require increased power and involves a trade-off between improving noise figure and gain.
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