沟道注入对高频纳米n- finet设计的影响

2009 International Conference on Emerging Trends in Electronic and Photonic Devices & Systems Pub Date : 2009-12-01 DOI:10.1109/ELECTRO.2009.5441064

M. Sengupta, S. Chattopadhyay, C. Maiti

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引用次数: 1

摘要

本文研究了通道注入剂量和能量对高频应用的纳米FinFET器件设计的影响。结果表明，注入剂量和能量均可提高器件的阈值电压，但由于载流子散射较小，后者更可取。器件的漏极电流和峰值截止频率随注入剂量的减小或注入能量的增大而增大。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

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Effect of channel implantation on the design of high frequency nanoscale n-FinFETs

In this paper, the effect of channel implantation dose and energy has been studied for the design of nanoscale FinFET devices for high frequency application. It was observed that the threshold voltage of the device may be increased through both implantation dose and energy but the later is preferable because of less carrier scattering. The drain current and the peak cut-off frequency of the device were found to increase either with the decrease in implantation dose or increase in implantation energy.

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2009 International Conference on Emerging Trends in Electronic and Photonic Devices & Systems

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