采用微磁方法对高Gb/Chip的极型MRAM系统进行了介绍和分析

Digests of the 2010 14th Biennial IEEE Conference on Electromagnetic Field Computation Pub Date : 2010-05-09 DOI:10.1109/CEFC.2010.5481651

H. Won, Sung yeol Cho, G. Park

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引用次数: 0

摘要

本文介绍了一种新的高Gb/Chip带极点系统的MRAM设计。为了克服降低功耗的问题，我们提出了新的MRAM设计，它有两个额外的高渗透极。本文提出的新型MRAM设计由于在自由层的两侧增加了两个极，就像垂直的磁记录磁头一样，具有很强的开关场。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

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Introduction and analysis of the MRAM with pole type system by using micromagnetic approach for high Gb/Chip

In this paper, new MRAM designs for high Gb/Chip with pole system was introduced. In order to overcome problem of reducing power consumption, we proposed new MRAM design that has two additional high permeable poles. Proposed new MRAM designs has a strong switching field owing to two poles added on both sides of the free layer, just like perpendicular magnetic recording heads.

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Digests of the 2010 14th Biennial IEEE Conference on Electromagnetic Field Computation

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