由mosfet和无结场效应管组成的两种单片三维逆变器的比较

2020 International Conference on Electronics, Information, and Communication (ICEIC) Pub Date : 2020-01-01 DOI:10.1109/ICEIC49074.2020.9051059

T. Ahn, Y. Yu, N. Kim

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引用次数: 2

摘要

研究了两种单片三维逆变器(M3DINV)中堆叠晶体管的电耦合特性。一种是n型和p型mosfet堆叠，另一种是n型和p型无结场效应晶体管堆叠。研究了两种M3DINV中堆叠晶体管在不同层间距厚度下的耦合特性。当堆叠的jlfet和堆叠的mosfet之间的ild厚度都大于30 nm时，堆叠的jlfet和堆叠的mosfet之间的相互作用都可以忽略。

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Comparison of Two-Types of Monolithic 3D Inverter Consisting of MOSFETs and Junctionless FETs

The electrical coupling with stacked transistors in two types of monolithic 3D inverter (M3DINV) are investigated. One is stacked with n-type and p-type MOSFETs and another is stacked with n-type and p-type junctionless field-effect transistors. The coupling of stacked transistors in two-types of M3DINV is investigated in terms of various thickness of interlayer distance (ILD) between stacked transistors. When the thickness of both ILDs between stacked JLFETs and stacked MOSFETs are more than 30 nm, both interactions between the stacked JLFETs and stacked MOSFETs can be neglected.

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2020 International Conference on Electronics, Information, and Communication (ICEIC)

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