薄膜InGaAlAs MQW电吸收调制器在Si平台上的非冷却运行

2023 IEEE Silicon Photonics Conference (SiPhotonics) Pub Date : 2023-04-01 DOI:10.1109/SiPhotonics55903.2023.10141948

T. Hiraki, T. Aihara, Y. Maeda, T. Fujii, T. Sato, T. Tsuchizawa, K. Takahata, T. Kakitsuka, S. Matsuo

{"title":"薄膜InGaAlAs MQW电吸收调制器在Si平台上的非冷却运行","authors":"T. Hiraki, T. Aihara, Y. Maeda, T. Fujii, T. Sato, T. Tsuchizawa, K. Takahata, T. Kakitsuka, S. Matsuo","doi":"10.1109/SiPhotonics55903.2023.10141948","DOIUrl":null,"url":null,"abstract":"We demonstrate uncooled operation of an O-band membrane InGaAlAs electro-absorption modulator (EAM) on a Si platform. The EAM exhibits a static extinction ratio of more than 2.9 dB, insertion loss of less than 6.2 dB, and 100-Gbit/s non-return-to-zero operations from 25 to 80°C.","PeriodicalId":105710,"journal":{"name":"2023 IEEE Silicon Photonics Conference (SiPhotonics)","volume":"29 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2023-04-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":"{\"title\":\"Uncooled Operation of Membrane InGaAlAs MQW Electro-absorption Modulator on Si Platform\",\"authors\":\"T. Hiraki, T. Aihara, Y. Maeda, T. Fujii, T. Sato, T. Tsuchizawa, K. Takahata, T. Kakitsuka, S. Matsuo\",\"doi\":\"10.1109/SiPhotonics55903.2023.10141948\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"We demonstrate uncooled operation of an O-band membrane InGaAlAs electro-absorption modulator (EAM) on a Si platform. The EAM exhibits a static extinction ratio of more than 2.9 dB, insertion loss of less than 6.2 dB, and 100-Gbit/s non-return-to-zero operations from 25 to 80°C.\",\"PeriodicalId\":105710,\"journal\":{\"name\":\"2023 IEEE Silicon Photonics Conference (SiPhotonics)\",\"volume\":\"29 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2023-04-01\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"0\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"2023 IEEE Silicon Photonics Conference (SiPhotonics)\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/SiPhotonics55903.2023.10141948\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"2023 IEEE Silicon Photonics Conference (SiPhotonics)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/SiPhotonics55903.2023.10141948","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}

引用次数: 0

摘要

我们演示了在Si平台上的o波段膜InGaAlAs电吸收调制器(EAM)的非冷却操作。EAM的静态消光比大于2.9 dB，插入损耗小于6.2 dB，在25 ~ 80℃范围内具有100 gbit /s的不归零性能。

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Uncooled Operation of Membrane InGaAlAs MQW Electro-absorption Modulator on Si Platform

We demonstrate uncooled operation of an O-band membrane InGaAlAs electro-absorption modulator (EAM) on a Si platform. The EAM exhibits a static extinction ratio of more than 2.9 dB, insertion loss of less than 6.2 dB, and 100-Gbit/s non-return-to-zero operations from 25 to 80°C.

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2023 IEEE Silicon Photonics Conference (SiPhotonics)

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